| Mfg |
Part # |
Datasheet |
Description |
 Anaren Microwave |
C10A50Z4 |
524Kb/2P |
Surface Mount Termination |
| C10A50Z4 |
136Kb/2P |
Surface Mount Termination |
 NXP Semiconductors |
C10A50Z4 |
221Kb/10P |
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Rev. 2, 02/2021 |
| C10A50Z4 |
364Kb/8P |
RF Power GaN Transistor Rev. 1, 05/2021 |
| C10A50Z4 |
374Kb/8P |
RF Power GaN Transistor Rev. 1, 01/2021 |
| C10A50Z4 |
221Kb/8P |
RF Power GaN Transistor |
| C10A50Z4 |
344Kb/8P |
RF Power GaN Transistor |
| C10A50Z4 |
319Kb/8P |
RF Power LDMOS Transistor |
| C10A50Z4 |
491Kb/23P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 2, 10/2022 |
| C10A50Z4 |
438Kb/16P |
2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR Rev. 1, 01/2022 |
| C10A50Z4 |
491Kb/15P |
Airfast RF Power GaN Transistor Rev. 1 - 20 March 2024 |
 Anaren Microwave |
C10A50Z4_10 |
163Kb/3P |
Surface Mount Termination 10 Watts, 50廓 |
| C10A50Z4_12 |
136Kb/2P |
Surface Mount Termination |