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100B201JW30 Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| 100B201JW30 | AVX |
|
SMD | 25900 | 2020+ | Instock | 26-09-18 |
Inquiry
|
| 100B201JW300XT | - |
|
4560 | 2020+ | Instock | 26-09-18 |
Inquiry
|
1
100B201JW30 Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
100B2130130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2130222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2130470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
 NXP Semiconductors |
100B220JCA500X |
763Kb/20P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006 |
| 100B220JCA500X |
955Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011 |
|
 Freescale Semicondu... |
100B220JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
Vishay Siliconix |
100B2222130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2222222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2222470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
|
Freescale Semicondu... |
100B240JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
Vishay Siliconix |
100B2470130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2470222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2470470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
 Advanced Semiconduc... |
100B270JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B2R0JP500X |
2Mb/5P |
Silicon MOSFET Technology | |
|
NXP Semiconductors |
100B2R2BW |
694Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006 |
| 100B2R2BW |
693Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006 |
|
|
Advanced Semiconduc... |
100B2R4JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B2R4JP500X |
1Mb/8P |
All Gold Bonding Scheme | |
|
NXP Semiconductors |
100B2R7BT500XT |
424Kb/12P |
RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Rev. 0, 02/2021 |
|
Freescale Semicondu... |
100B2R7CP500X |
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
|
NXP Semiconductors |
100B2R7CP500X |
670Kb/16P |
RF LDMOS Wideband Integrated Power Amplifier Rev. 4, 5/2006 |