100B160KT500XT stock, price, datasheet. – IC Agent Electronics Ins

100B160KT500XT Search results

Premium Supplier

Element14

IC Agent Electronics Ins

FEDERAL INDUSTRY CO.

Supplier

Microtranik,Components,Inc. Transcrui Microcircuit Corporation Evatronix(HK) Electronics Trade Inc IC Agent Electronics Ins Hongkong Inductors Limited Hongkong Inductors Limited Evatronix(HK) Technology Limited

By Stock Alphabetical

Premium B

Total: 1

( 1/1 Page)

info

IC Agent Electronics Ins

USA

Kevin@ic-agent.com

Part #	Mfg	Datasheet	Description	Q'ty	Datacode	Location	Reg Date	RFQ
100B160KT500XT	ATC/Americ		SMD	359280	2020+	Instock	26-09-18	Inquiry

100B160KT500XT Datasheet

Mfg	Part #	Datasheet	Description
NXP Semiconductors	100B100GW	694Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006
NXP Semiconductors	100B100GW	693Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006
Freescale Semicondu...	100B100JCA500X	594Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors	100B100JCA500X	763Kb/20P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006
	100B100JCA500X	955Kb/18P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011
	100B100JT500XT	294Kb/8P	RF Power GaN Transistor
Winchester Electron...	100B1016P95	393Kb/5P	MARC REMOVABLE PIN & SOCKET CONTACTS
Freescale Semicondu...	100B101JP500X	132Kb/12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Advanced Semiconduc...	100B101JP500X	2Mb/5P	Silicon MOSFET Technology
Advanced Semiconduc...	100B101JP500X	1Mb/8P	All Gold Bonding Scheme
NXP Semiconductors	100B102JCA500X	763Kb/20P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006
NXP Semiconductors	100B102JCA500X	955Kb/18P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011
Freescale Semicondu...	100B102JP500X	132Kb/12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Vishay Siliconix	100B110KBO1	289Kb/4P	1 5/16 (33.3 mm) Single Turn Wirewound Precision Potentiometer Revision: 28-Jun-07
	100B1130130XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1130222XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1130470XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
Freescale Semicondu...	100B120JP500X	594Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors	100B120JP500X	670Kb/16P	RF LDMOS Wideband Integrated Power Amplifier Rev. 4, 5/2006
NXP Semiconductors	100B120JT500XT	427Kb/20P	Airfast RF Power LDMOS Transistor Rev. 0-March 2021
Freescale Semicondu...	100B121JP500X	928Kb/20P	N-Channel Enhancement-Mode Lateral MOSFETs
Vishay Siliconix	100B1222130XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1222222XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1222470XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
Freescale Semicondu...	100B130JP500X	928Kb/20P	N-Channel Enhancement-Mode Lateral MOSFETs
Vishay Siliconix	100B1470130XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1470222XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1470470XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
Advanced Semiconduc...	100B150JP500X	2Mb/5P	Silicon MOSFET Technology
Advanced Semiconduc...	100B150JP500X	1Mb/8P	All Gold Bonding Scheme