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020112PJ Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| 02011601101 | HARTING |
|
New&Original | 85000 | 2019 | stockontime | 26-10-03 |
Inquiry
|
| 02011602101 | HARTING |
|
New&Original | 85000 | 2019 | stockontime | 26-10-03 |
Inquiry
|
| 02011602102 | HARTING |
|
New&Original | 85000 | 2019 | stockontime | 26-10-03 |
Inquiry
|
| 02011J0R1ABSTR | AVX |
|
SMD | 2553000 | 2020+ | Instock | 26-10-03 |
Inquiry
|
02011J0R2ABSTR
|
AVX |
|
SMD | 394100 | 2020+ | Instock | 26-10-03 |
Inquiry
|
| 02011J0R3ABSTR | AVX |
|
SMD | 2587200 | 2020+ | Instock | 26-10-03 |
Inquiry
|
|
02011J0R4ABSTR
|
AVX |
|
SMD | 35000 | 2020+ | Instock | 26-10-03 |
Inquiry
|
| 02011J0R4PBSTR | AVX |
|
SMD | 35000 | 2020+ | Instock | 26-10-03 |
Inquiry
|
| 02011J0R4ZBSTR | AVX |
|
SMD | 35000 | 2020+ | Instock | 26-10-03 |
Inquiry
|
| 02011J0R5ABSTR | AVX |
|
SMD | 2243400 | 2020+ | Instock | 26-10-03 |
Inquiry
|
1
020112PJ Datasheet
| Mfg | Part # | Datasheet | Description |
 M/A-COM Technology ... |
02011-BRF-001-A |
115Kb/2P |
622Mbps Transimpedance Amplifier with AGC |
| 02011-DSH-001-C |
306Kb/21P |
CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 622 Mbps | |
 PHOENIX CONTACT |
0201139 |
47Kb/2P |
Insertion bridge - EB 10- 6 - 0201139 |
| 0201142 |
47Kb/2P |
Insertion bridge - EB 3- 6 - 0201142 | |
| 0201155 |
46Kb/2P |
Insertion bridge - EB 2- 6 - 0201155 | |
| 0201168 |
43Kb/2P |
Fixed bridge - FB 3- 6 | |
| 0201184 |
43Kb/2P |
Fixed bridge - FB 10- 6 - 0201184 | |
| 0201197 |
43Kb/2P |
Fixed bridge - FB 2-6 - 0201197 | |
 AVX Corporation |
02011D107KAT2A |
787Kb/4P |
General Specifications |
| 02011D107KAT4A |
787Kb/4P |
General Specifications | |
| 02011D107KATUA |
787Kb/4P |
General Specifications | |
| 02011D107MAT2A |
787Kb/4P |
General Specifications | |
| 02011D107MAT4A |
787Kb/4P |
General Specifications | |
| 02011D107MATUA |
787Kb/4P |
General Specifications | |
| 02011J4R7AASTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7AASTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7AASTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7AATTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7AATTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7AATTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7AAWTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7AAWTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7AAWTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7ABSTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7ABSTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7ABSTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7ABSTR500 |
1Mb/25P |
Thin-Film Technology | |
| 02011J4R7ABTTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7ABTTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7ABTTR |
217Kb/19P |
High purity of electrodes for very low and repeatable |