| Mfg |
Part # |
Datasheet |
Description |
 Vishay Siliconix |
VB40100G |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A Revision: 19-May-08 |
| VB40100G-E3 |
161Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 09-Sep-13 |
| VB40100G-E3 |
151Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 09-Sep-13 |
| VB40100G-E3 |
217Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
| VB40100G-E3/4W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A Revision: 19-May-08 |
| VB40100G-E3/4W |
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
| VB40100G-E3/8W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A Revision: 19-May-08 |
| VB40100G-E3/8W |
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |