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NE552R479A Search results
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Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
NE555N
|
STMICROELECTRONICS |  |
IC, TIMER; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:DIP; N | ROHS COMPLIANT | 1+ : $0.727 |
Buy Now
|
|
NE556N
|
STMICROELECTRONICS | |
IC, TIMER DUAL, DIP14, 556; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digit | ROHS COMPLIANT | 1+ : $1.04 10+ : $0.564 100+ : $0.417 250+ : $0.327 500+ : $0.27 800+ : $0.243 3000+ : $0.167 8000+ : $0.167 |
Buy Now
|
|
NE555DT
|
STMICROELECTRONICS | |
IC, TIMER, SMD; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:S | ROHS COMPLIANT | 1+ : $0.762 |
Buy Now
|
|
|
NE555DT
|
STMICROELECTRONICS | |
IC, TIMER, SMD; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:S | ROHS COMPLIANT | 1+ : $0.762 |
Buy Now
|
1
NE552R479A Datasheet
| Mfg | Part # | Datasheet | Description |
 California Eastern ... |
NE552R479A |
495Kb/9P |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |
| NE552R479A |
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS | |
 Renesas Technology ... |
NE552R479A |
291Kb/11P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE552R479A-T1 |
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS |
|
Renesas Technology ... |
NE552R479A-T1 |
291Kb/11P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE552R479A-T1-A |
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS |
| NE552R479A-T1A |
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS | |
|
Renesas Technology ... |
NE552R479A-T1A |
291Kb/11P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE552R479A-T1A-A |
495Kb/9P |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |