NE5523079A stock, price, datasheet.

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Part #	Mfg	Datasheet	Description	RoHS	Q'ty	Price	Buy Now
NE555N	STMICROELECTRONICS		IC, TIMER; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:DIP; N	ROHS COMPLIANT		1+ : $0.727	Buy Now
NE556N	STMICROELECTRONICS		IC, TIMER DUAL, DIP14, 556; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digit	ROHS COMPLIANT		1+ : $1.04 10+ : $0.564 100+ : $0.417 250+ : $0.327 500+ : $0.27 800+ : $0.243 3000+ : $0.167 8000+ : $0.167	Buy Now
NE555DT	STMICROELECTRONICS		IC, TIMER, SMD; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:S	ROHS COMPLIANT		1+ : $0.762	Buy Now
NE555DT	STMICROELECTRONICS		IC, TIMER, SMD; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:S	ROHS COMPLIANT		1+ : $0.762	Buy Now

NE5523079A Datasheet

Mfg	Part #	Datasheet	Description
NEC	NE5520279A	166Kb/7P	NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
California Eastern ...	NE5520279A	351Kb/8P	3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
Renesas Technology ...	NE5520279A	290Kb/11P	SILICON POWER MOS FET 2003
NEC	NE5520279A-T1	166Kb/7P	NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
Renesas Technology ...	NE5520279A-T1	290Kb/11P	SILICON POWER MOS FET 2003
California Eastern ...	NE5520279A-T1-A	351Kb/8P	3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
Renesas Technology ...	NE5520279A-T1A	290Kb/11P	SILICON POWER MOS FET 2003
California Eastern ...	NE5520379A	390Kb/9P	NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
Renesas Technology ...	NE5520379A	295Kb/13P	SILICON POWER MOS FET 2003
	NE5520379A-T1	295Kb/13P	SILICON POWER MOS FET 2003
	NE5520379A-T1A	295Kb/13P	SILICON POWER MOS FET 2003
California Eastern ...	NE5520379A-T1A-A	390Kb/9P	NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
NXP Semiconductors	NE5521	69Kb/5P	LVDT signal conditioner August 31, 1994
	NE5521D	69Kb/5P	LVDT signal conditioner August 31, 1994
	NE5521N	69Kb/5P	LVDT signal conditioner August 31, 1994
California Eastern ...	NE552R479A	495Kb/9P	NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
California Eastern ...	NE552R479A	605Kb/7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
Renesas Technology ...	NE552R479A	291Kb/11P	SILICON POWER MOS FET 2003
California Eastern ...	NE552R479A-T1	605Kb/7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
Renesas Technology ...	NE552R479A-T1	291Kb/11P	SILICON POWER MOS FET 2003
California Eastern ...	NE552R479A-T1-A	605Kb/7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
California Eastern ...	NE552R479A-T1A	605Kb/7P	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
Renesas Technology ...	NE552R479A-T1A	291Kb/11P	SILICON POWER MOS FET 2003
California Eastern ...	NE552R479A-T1A-A	495Kb/9P	NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
NEC	NE552R679A	68Kb/9P	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
Renesas Technology ...	NE552R679A	290Kb/11P	SILICON POWER MOS FET 2003
NEC	NE552R679A-T1	68Kb/9P	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
Renesas Technology ...	NE552R679A-T1	290Kb/11P	SILICON POWER MOS FET 2003
NEC	NE552R679A-T1A	68Kb/9P	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
Renesas Technology ...	NE552R679A-T1A	290Kb/11P	SILICON POWER MOS FET 2003