NE551D stock, price, datasheet.

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Part #	Mfg	Datasheet	Description	RoHS	Q'ty	Price	Buy Now
NE555N	STMICROELECTRONICS		IC, TIMER; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:DIP; N	ROHS COMPLIANT		1+ : $0.727	Buy Now
NE556N	STMICROELECTRONICS		IC, TIMER DUAL, DIP14, 556; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digit	ROHS COMPLIANT		1+ : $1.04 10+ : $0.564 100+ : $0.417 250+ : $0.327 500+ : $0.27 800+ : $0.243 3000+ : $0.167 8000+ : $0.167	Buy Now
NE555DT	STMICROELECTRONICS		IC, TIMER, SMD; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:S	ROHS COMPLIANT		1+ : $0.762	Buy Now
NE555DT	STMICROELECTRONICS		IC, TIMER, SMD; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:S	ROHS COMPLIANT		1+ : $0.762	Buy Now

NE551D Datasheet

Mfg	Part #	Datasheet	Description
NEC	NE5510179A	39Kb/4P	3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
California Eastern ...	NE5510179A	42Kb/4P	3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
NEC	NE5510179A-T1	39Kb/4P	3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
California Eastern ...	NE5510179A-T1	42Kb/4P	3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
NEC	NE5510279A	39Kb/5P	3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
California Eastern ...	NE5510279A	42Kb/5P	3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
Renesas Technology ...	NE5510279A	288Kb/12P	SILICON POWER MOS FET 2003
NEC	NE5510279A-T1	39Kb/5P	3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
California Eastern ...	NE5510279A-T1	42Kb/5P	3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
Renesas Technology ...	NE5510279A-T1	288Kb/12P	SILICON POWER MOS FET 2003
NEC	NE5511279A	99Kb/3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
California Eastern ...	NE5511279A	296Kb/4P	7.5 V UHF BAND RF POWER SILICON LD-MOS FET
California Eastern ...	NE5511279A	297Kb/4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology ...	NE5511279A	272Kb/10P	SILICON POWER MOS FET 2003
California Eastern ...	NE5511279A-A	297Kb/4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NEC	NE5511279A-T1	99Kb/3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology ...	NE5511279A-T1	272Kb/10P	SILICON POWER MOS FET 2003
California Eastern ...	NE5511279A-T1-A	296Kb/4P	7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NEC	NE5511279A-T1A	99Kb/3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology ...	NE5511279A-T1A	272Kb/10P	SILICON POWER MOS FET 2003
California Eastern ...	NE5511279A-T1A-A	296Kb/4P	7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NXP Semiconductors	NE5512	33Kb/4P	Dual high-performance operational amplifier August 31, 1994
	NE5512D	33Kb/4P	Dual high-performance operational amplifier August 31, 1994
	NE5512N	33Kb/4P	Dual high-performance operational amplifier August 31, 1994
	NE5514	54Kb/3P	Quad high-performance operational amplifier August 31, 1994
	NE5514D	54Kb/3P	Quad high-performance operational amplifier August 31, 1994
	NE5514N	54Kb/3P	Quad high-performance operational amplifier August 31, 1994
	NE5517	298Kb/13P	Dual operational transconductance amplifier 2002 Dec 06
	NE5517	193Kb/18P	Dual operational transconductance amplifier 2002 Dec 06
ON Semiconductor	NE5517	187Kb/14P	Dual Operational Transconductance Amplifier April, 2006 ??Rev. 3