NE550N stock, price, datasheet.

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Part #	Mfg	Datasheet	Description	RoHS	Q'ty	Price	Buy Now
NE555N	STMICROELECTRONICS		IC, TIMER; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:DIP; N	ROHS COMPLIANT		1+ : $0.727	Buy Now
NE556N	STMICROELECTRONICS		IC, TIMER DUAL, DIP14, 556; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digit	ROHS COMPLIANT		1+ : $1.04 10+ : $0.564 100+ : $0.417 250+ : $0.327 500+ : $0.27 800+ : $0.243 3000+ : $0.167 8000+ : $0.167	Buy Now
NE555DT	STMICROELECTRONICS		IC, TIMER, SMD; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:S	ROHS COMPLIANT		1+ : $0.762	Buy Now
NE555DT	STMICROELECTRONICS		IC, TIMER, SMD; Frequency:500kHz; Supply Voltage Min:4.5V; Supply Voltage Max:16V; Digital IC Case:S	ROHS COMPLIANT		1+ : $0.762	Buy Now

NE550N Datasheet

Mfg	Part #	Datasheet	Description
Renesas Technology ...	NE5500134	285Kb/8P	SILICON POWER MOS FET 2007
	NE5500134-A	137Kb/2P	RF & Microwave device
	NE5500134-AZ	285Kb/8P	SILICON POWER MOS FET 2007
	NE5500134-T1	285Kb/8P	SILICON POWER MOS FET 2007
	NE5500134-T1-AZ	285Kb/8P	SILICON POWER MOS FET 2007
NEC	NE5500179A	66Kb/11P	SILICON POWER MOS FET
California Eastern ...	NE5500179A	43Kb/5P	4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
Renesas Technology ...	NE5500179A	298Kb/13P	SILICON POWER MOS FET 2003
NEC	NE5500179A-T1	66Kb/11P	SILICON POWER MOS FET
California Eastern ...	NE5500179A-T1	43Kb/5P	4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
Renesas Technology ...	NE5500179A-T1	298Kb/13P	SILICON POWER MOS FET 2003
California Eastern ...	NE5500234	308Kb/6P	4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
Renesas Technology ...	NE5500234	293Kb/9P	SILICON POWER MOS FET 2007
Renesas Technology ...	NE5500234-A	137Kb/2P	RF & Microwave device
California Eastern ...	NE5500234-AZ	308Kb/6P	4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
Renesas Technology ...	NE5500234-AZ	293Kb/9P	SILICON POWER MOS FET 2007
California Eastern ...	NE5500234-T1	308Kb/6P	4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
Renesas Technology ...	NE5500234-T1	293Kb/9P	SILICON POWER MOS FET 2007
California Eastern ...	NE5500234-T1-AZ	308Kb/6P	4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
Renesas Technology ...	NE5500234-T1-AZ	293Kb/9P	SILICON POWER MOS FET 2007
	NE5500434	290Kb/9P	SILICON POWER MOS FET 2007
	NE5500434-A	137Kb/2P	RF & Microwave device
	NE5500434-AZ	290Kb/9P	SILICON POWER MOS FET 2007
	NE5500434-T1	290Kb/9P	SILICON POWER MOS FET 2007
	NE5500434-T1-AZ	290Kb/9P	SILICON POWER MOS FET 2007
	NE5500479A	285Kb/11P	SILICON POWER MOS FET 2003
	NE5500479A-T1	285Kb/11P	SILICON POWER MOS FET 2003