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HY510 Search results
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Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
HY508/3 F/F
|
HYLEC |  |
TERMINAL BLOCK, 6P, M4 SCREW, 6 TAB; No. of Rows:3 Row; No. of Positions:6Ways; Wire Size AWG Min:-; | ROHS COMPLIANT | 2,587 | 1+ : $4.64 10+ : $4.1 100+ : $3.71 250+ : $3.44 500+ : $3.14 1000+ : $2.7 |
Buy Now
|
HY508/6 F/F
|
HYLEC | |
TERMINAL BLOCK, 6P, M4 SCREW, 6 TAB; No. of Rows:6 Row; No. of Positions:6Ways; Wire Size AWG Min:-; | ROHS COMPLIANT | 1,032 | 1+ : $8.65 10+ : $7.65 100+ : $6.92 250+ : $6.41 500+ : $5.86 1000+ : $5.03 |
Buy Now
|
HY508/2 V/3F
|
HYLEC | |
TERMINAL BLOCK, 2P, M4 SCREW, 3 TAB; No. of Rows:2 Row; No. of Positions:2Ways; Wire Size AWG Min:-; | ROHS COMPLIANT | 865 | 1+ : $3.91 10+ : $3.46 100+ : $3.13 250+ : $2.9 500+ : $2.65 1000+ : $2.27 |
Buy Now
|
HY52A05PSE25B
|
SEPA | |
FAN BLOWER, RADIAL, 52MM, 2.65CFM, 5VDC; | ROHS COMPLIANT | 60 | 1+ : $14.87 5+ : $14.16 10+ : $13.38 20+ : $12.75 50+ : $12.11 |
Buy Now
|
1
HY510 Datasheet
| Mfg | Part # | Datasheet | Description |
 HUAYI MICROELECTRON... |
HY5110A |
626Kb/11P |
N-Channel Enhancement Mode MOSFET |
| HY5110W |
626Kb/11P |
N-Channel Enhancement Mode MOSFET | |
 List of Unclassifed... |
HY514400 |
916Kb/18P |
1M x 4-bit CMOS DRAM |
| HY514400A |
804Kb/18P |
1M x 4-bit CMOS DRAM | |
| HY514400AJ |
804Kb/18P |
1M x 4-bit CMOS DRAM | |
| HY514400ALJ |
804Kb/18P |
1M x 4-bit CMOS DRAM | |
| HY514400ALR |
804Kb/18P |
1M x 4-bit CMOS DRAM | |
| HY514400ALT |
804Kb/18P |
1M x 4-bit CMOS DRAM | |
| HY514400AR |
804Kb/18P |
1M x 4-bit CMOS DRAM | |
| HY514400AT |
804Kb/18P |
1M x 4-bit CMOS DRAM | |
| HY514400B |
100Kb/8P |
1Mx4, Fast Page mode | |
| HY514400BJ |
100Kb/8P |
1Mx4, Fast Page mode | |
| HY514400BLJ |
100Kb/8P |
1Mx4, Fast Page mode | |
| HY514400BLT |
100Kb/8P |
1Mx4, Fast Page mode | |
| HY514400BSLJ |
100Kb/8P |
1Mx4, Fast Page mode | |
| HY514400BSLT |
100Kb/8P |
1Mx4, Fast Page mode | |
| HY514400BT |
100Kb/8P |
1Mx4, Fast Page mode | |
| HY514400J |
916Kb/18P |
1M x 4-bit CMOS DRAM | |
 Hynix Semiconductor |
HY51V18163HGJ |
107Kb/12P |
1M x 16Bit EDO DRAM |
| HY51V18163HGJ-5 |
107Kb/12P |
1M x 16Bit EDO DRAM | |
| HY51V18163HGJ-6 |
107Kb/12P |
1M x 16Bit EDO DRAM | |
| HY51V18163HGJ-7 |
107Kb/12P |
1M x 16Bit EDO DRAM | |
| HY51V18163HGT |
107Kb/12P |
1M x 16Bit EDO DRAM | |
| HY51V18163HGT-5 |
107Kb/12P |
1M x 16Bit EDO DRAM | |
| HY51V18163HGT-6 |
107Kb/12P |
1M x 16Bit EDO DRAM | |
| HY51V18163HGT-7 |
107Kb/12P |
1M x 16Bit EDO DRAM | |
| HY51V65163HG |
96Kb/11P |
4M x 16Bit EDO DRAM | |
| HY51V65163HGJ-45 |
96Kb/11P |
4M x 16Bit EDO DRAM | |
| HY51V65163HGJ-5 |
96Kb/11P |
4M x 16Bit EDO DRAM | |
| HY51V65163HGJ-6 |
96Kb/11P |
4M x 16Bit EDO DRAM |