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GT50J321 Search results
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Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
| GT50J123,STA1E(S | TOSHIBA |  |
HALBLEITERBAUELEMENTE, TRANSISTOR, DISCR; | ROHS COMPLIANT | 1+ : $7.87 10+ : $5.37 100+ : $4.23 500+ : $3.94 1000+ : $3.76 |
Buy Now
|
|
| GT50JR21(STA1,E,S) | TOSHIBA | |
HALBLEITERBAUELEMENTE, TRANSISTOR, DISCR; | ROHS COMPLIANT | 1+ : $8.59 10+ : $5.87 100+ : $4.62 500+ : $4.3 1000+ : $4.1 |
Buy Now
|
|
GT50JR22(STA1,E,S)
|
TOSHIBA | |
TRANSISTOR, IGBT, 600V, 50A, TO-3PN; | ROHS COMPLIANT | 350 | 1+ : $8.29 10+ : $5.78 100+ : $5 500+ : $4.9 1000+ : $4.8 |
Buy Now
|
1
GT50J321 Datasheet
| Mfg | Part # | Datasheet | Description |
 Toshiba Semiconduct... |
GT50J322 |
254Kb/5P |
N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) |
| GT50J322 |
614Kb/6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT | |
| GT50J322 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J322H |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J322_06 |
614Kb/6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT | |
| GT50J325 |
170Kb/7P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
| GT50J325 |
198Kb/7P |
Silicon N Channel IGBT High Power Switching Applications | |
| GT50J325 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J325_06 |
198Kb/7P |
Silicon N Channel IGBT High Power Switching Applications | |
| GT50J327 |
159Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application | |
| GT50J327 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J328 |
232Kb/6P |
Current Resonance Inverter Switching Application Fourth Generation IGBT | |
| GT50J328 |
1Mb/73P |
Bipolar Small-Signal Transistors |