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100B200FT500XT Search results
Premium Supplier
Supplier
NegoICCo.
Microtranik,Components,Inc.
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Hongkong Inductors Limited
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Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
100B
|
BEEHIVE ELECTRONICS |  |
RF Test Component Type:Connector; Frequency:3.1GHz; Impedance:50ohm; Continuous RF Input Power Max:- | ROHS COMPLIANT | 1+ : $170.26 5+ : $164.49 |
Buy Now
|
|
100B101JW500XT
|
KYOCERA AVX | |
RF CAPACITOR, 100PF, 500VDC, 1111; Capacitance:100pF; Voltage Rating:500VDC; Product Range:Porcelain | ROHS COMPLIANT | 94 | 1+ : $10.36 2+ : $9.7 3+ : $9.03 5+ : $8.36 10+ : $7.69 20+ : $7.54 |
Buy Now
|
|
100B680JT500XT
|
KYOCERA AVX | |
RF CAPACITOR, 68PF, 500VDC, 1111; Capacitance:68pF; Voltage Rating:500VDC; Product Range:Porcelain S | ROHS COMPLIANT | 719 | 1+ : $10.6 2+ : $9.92 3+ : $9.24 5+ : $8.56 10+ : $7.88 20+ : $7.73 |
Buy Now
|
| 100B300FW500XTV | KYOCERA AVX | |
RF CAPACITOR, 30PF, 500VDC, 1111; Capacitance:30pF; Voltage Rating:500VDC; Product Range:Porcelain S | ROHS COMPLIANT | 475 | 1+ : $29.89 2+ : $22.16 3+ : $18.9 5+ : $17.38 10+ : $16.16 20+ : $14.92 |
Buy Now
|
1
100B200FT500XT Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
100B2130130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2130222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2130470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
 NXP Semiconductors |
100B220JCA500X |
763Kb/20P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006 |
| 100B220JCA500X |
955Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011 |
|
 Freescale Semicondu... |
100B220JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
Vishay Siliconix |
100B2222130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2222222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2222470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
|
Freescale Semicondu... |
100B240JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
Vishay Siliconix |
100B2470130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2470222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2470470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
 Advanced Semiconduc... |
100B270JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B2R0JP500X |
2Mb/5P |
Silicon MOSFET Technology | |
|
NXP Semiconductors |
100B2R2BW |
694Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006 |
| 100B2R2BW |
693Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006 |
|
|
Advanced Semiconduc... |
100B2R4JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B2R4JP500X |
1Mb/8P |
All Gold Bonding Scheme | |
|
NXP Semiconductors |
100B2R7BT500XT |
424Kb/12P |
RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Rev. 0, 02/2021 |
|
Freescale Semicondu... |
100B2R7CP500X |
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
|
NXP Semiconductors |
100B2R7CP500X |
670Kb/16P |
RF LDMOS Wideband Integrated Power Amplifier Rev. 4, 5/2006 |