100B161MW300XT stock, price, datasheet.

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Part #	Mfg	Datasheet	Description	RoHS	Q'ty	Price	Buy Now
100B101JW500XT	KYOCERA AVX		RF CAPACITOR, 100PF, 500VDC, 1111; Capacitance:100pF; Voltage Rating:500VDC; Product Range:Porcelain	ROHS COMPLIANT	94	1+ : $10.36 2+ : $9.7 3+ : $9.03 5+ : $8.36 10+ : $7.69 20+ : $7.54	Buy Now

100B161MW300XT Datasheet

Mfg	Part #	Datasheet	Description
NXP Semiconductors	100B100GW	694Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006
NXP Semiconductors	100B100GW	693Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006
Freescale Semicondu...	100B100JCA500X	594Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors	100B100JCA500X	763Kb/20P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006
	100B100JCA500X	955Kb/18P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011
	100B100JT500XT	294Kb/8P	RF Power GaN Transistor
Winchester Electron...	100B1016P95	393Kb/5P	MARC REMOVABLE PIN & SOCKET CONTACTS
Freescale Semicondu...	100B101JP500X	132Kb/12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Advanced Semiconduc...	100B101JP500X	2Mb/5P	Silicon MOSFET Technology
Advanced Semiconduc...	100B101JP500X	1Mb/8P	All Gold Bonding Scheme
NXP Semiconductors	100B102JCA500X	763Kb/20P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006
NXP Semiconductors	100B102JCA500X	955Kb/18P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011
Freescale Semicondu...	100B102JP500X	132Kb/12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Vishay Siliconix	100B110KBO1	289Kb/4P	1 5/16 (33.3 mm) Single Turn Wirewound Precision Potentiometer Revision: 28-Jun-07
	100B1130130XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1130222XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1130470XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
Freescale Semicondu...	100B120JP500X	594Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors	100B120JP500X	670Kb/16P	RF LDMOS Wideband Integrated Power Amplifier Rev. 4, 5/2006
NXP Semiconductors	100B120JT500XT	427Kb/20P	Airfast RF Power LDMOS Transistor Rev. 0-March 2021
Freescale Semicondu...	100B121JP500X	928Kb/20P	N-Channel Enhancement-Mode Lateral MOSFETs
Vishay Siliconix	100B1222130XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1222222XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1222470XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
Freescale Semicondu...	100B130JP500X	928Kb/20P	N-Channel Enhancement-Mode Lateral MOSFETs
Vishay Siliconix	100B1470130XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1470222XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
	100B1470470XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022
Advanced Semiconduc...	100B150JP500X	2Mb/5P	Silicon MOSFET Technology
Advanced Semiconduc...	100B150JP500X	1Mb/8P	All Gold Bonding Scheme