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02011J0R2ABSTR Search results
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Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
02011602101
|
HARTING |  |
CONNECTOR, DIN 41612, PLUG, 160POS, 5ROW; | ROHS COMPLIANT | 662 | 1+ : $52.28 5+ : $49.88 10+ : $47.71 25+ : $45.81 50+ : $45.42 100+ : $45.03 |
Buy Now
|
02011602102
|
HARTING | |
CONNECTOR, DIN41612, PLUG, 160 POSITION, RIGHT ANGLE PCB; Product Range:har-bus 64 Series; No. of Co | ROHS COMPLIANT | 69 | 1+ : $54.62 5+ : $52.11 10+ : $49.85 25+ : $47.86 50+ : $47.45 100+ : $47.03 |
Buy Now
|
1
02011J0R2ABSTR Datasheet
| Mfg | Part # | Datasheet | Description |
 AVX Corporation |
02011J4R7AASTR |
1Mb/19P |
Thin-Film Technology |
| 02011J4R7AASTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7AASTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7AATTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7AATTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7AATTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7AAWTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7AAWTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7AAWTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7ABSTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7ABSTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7ABSTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7ABSTR500 |
1Mb/25P |
Thin-Film Technology | |
| 02011J4R7ABTTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7ABTTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7ABTTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7ABTTR500 |
1Mb/25P |
Thin-Film Technology | |
| 02011J4R7ABWTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7ABWTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7ABWTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7ABWTR500 |
1Mb/25P |
Thin-Film Technology | |
| 02011J4R7BASTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7BASTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7BASTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7BATTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7BATTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7BATTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02011J4R7BAWTR |
1Mb/19P |
Thin-Film Technology | |
| 02011J4R7BAWTR |
458Kb/20P |
Thin-Film Technology | |
| 02011J4R7BAWTR |
217Kb/19P |
High purity of electrodes for very low and repeatable |