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02015J0R9ABSTR Wyniki wyszukiwania
Premium Dostawca
Dostawca
Premium A
Element14
| Numer części | MFG | Arkusz danych | Opis | Rohs | Q'ty | Cena | Kup Teraz |
02015A100JAT2A
|
KYOCERA AVX |  |
CAP, 10PF, 50V, MLCC, 0201; | ROHS COMPLIANT | 28,933 | 500+ : $0.035 2500+ : $0.022 7500+ : $0.019 15000+ : $0.015 |
Kup Teraz
|
|
02015A100JAT2A
|
KYOCERA AVX | |
CAP, 10PF, 50V, MLCC, 0201; | ROHS COMPLIANT | 28,933 | 10+ : $0.076 100+ : $0.042 500+ : $0.035 2500+ : $0.022 7500+ : $0.019 15000+ : $0.015 |
Kup Teraz
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Numer części | MFG | Arkusz danych | Opis | Q'ty | Kod danych | Lokalizacja | Data reg | RFQ |
| 02015J0R4ABSTR | AVX |
|
SMD | 15999 | 2020+ | Pb-Free | 26-10-05 |
Zapytanie
|
| 02015J0R4PBSTR | AVX |
|
SMD | 15999 | 2020+ | Pb-Free | 26-10-05 |
Zapytanie
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Numer części | MFG | Arkusz danych | Opis | Q'ty | Kod danych | Lokalizacja | Data reg | RFQ |
| 02015J0R9ABSTR | AVX |
|
SMD | 735600 | 2020+ | Instock | 26-10-05 |
Zapytanie
|
Podstawowy
| Dostawca | Numer części | MFG | Arkusz danych | Opis | Q'ty | Kod danych | Lokalizacja | Data reg | RFQ |
| IC Agent Electronics Ins | 02015J0R9ABSTR | AVX |
|
SMD | 735600 | 2020+ | Instock | 2022-10-29 |
Zapytanie
|
1
02015J0R9ABSTR Arkusz danych
| MFG | Numer części | Arkusz danych | Opis |
 AVX Corporation |
02015J4R7AASTR |
1Mb/19P |
Thin-Film Technology |
| 02015J4R7AASTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7AASTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7AATTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7AATTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7AATTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7AAWTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7AAWTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7AAWTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7ABSTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7ABSTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7ABSTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7ABSTR |
340Kb/26P |
Thin-Film Technology | |
| 02015J4R7ABSTR500 |
1Mb/25P |
Thin-Film Technology | |
| 02015J4R7ABTTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7ABTTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7ABTTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7ABTTR |
340Kb/26P |
Thin-Film Technology | |
| 02015J4R7ABTTR500 |
1Mb/25P |
Thin-Film Technology | |
| 02015J4R7ABWTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7ABWTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7ABWTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7ABWTR |
340Kb/26P |
Thin-Film Technology | |
| 02015J4R7ABWTR500 |
1Mb/25P |
Thin-Film Technology | |
| 02015J4R7BASTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7BASTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7BASTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7BATTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7BATTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7BATTR |
217Kb/19P |
High purity of electrodes for very low and repeatable |