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Wszystko ( 3,314,868 )
Zacząć od F ( 53,291 )
| Numer części | MFG | Arkusz danych | Opis | Q'ty | Kod danych | Lokalizacja | Data reg | RFQ |
| F101 | NEC |
|
CAN3 | 10850 | 20+PB | Pb-Free | 26-10-01 |
Zapytanie
|
| F1010 | PB-FREE |
|
ROSH&New | 42000 | 2016 | Instock | 26-10-01 |
Zapytanie
|
| F1016 | TI |
|
SOP20W | 12000 | 2016 | Instock | 26-10-01 |
Zapytanie
|
| F101A | TOKYOCOI |
|
QFN | 8750 | 20+PB | Pb-Free | 26-10-01 |
Zapytanie
|
| F101B | NEC |
|
CAN3 | 10850 | 20+PB | Pb-Free | 26-10-01 |
Zapytanie
|
| F1010N | RoHs |
|
Original&New | 15000 | 2016 | Instock | 26-10-01 |
Zapytanie
|
| F1010E648P | RoHs |
|
Original&New | 15000 | 2016 | Instock | 26-10-01 |
Zapytanie
|
| F101K20Y5RL6.J5 | VISHAY |
|
DIP | 216999 | 2020+ | Pb-Free | 26-10-01 |
Zapytanie
|
| F101K25Y5RN6.J5 | VISHAY |
|
DIP | 138999 | 2020+ | Pb-Free | 26-10-01 |
Zapytanie
|
| F101K25Y5RP6.K5 | VISHAY |
|
DIP | 204999 | 2020+ | Pb-Free | 26-10-01 |
Zapytanie
|
| F101K33Y5RR6.K7 | VISHAY |
|
DIP | 138999 | 2020+ | Pb-Free | 26-10-01 |
Zapytanie
|
| F1010EREPLACEMENT | N/A |
|
Originalnew | 38000 | 2016 | Instock | 26-10-01 |
Zapytanie
|
1
F101 Arkusz danych
| MFG | Numer części | Arkusz danych | Opis |
 Powerbox |
F101 |
493Kb/2P |
10 WATTS SINGLE & DUAL OUTPUT DC/DC INDUSTRIAL |
 Littelfuse |
F101002-ND |
660Kb/4P |
Fuse Blocks and Clips - For 3AG Fuses |
 International Recti... |
F1010E |
195Kb/8P |
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A? |
| F1010N |
211Kb/8P |
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? | |
| F1010NS |
146Kb/10P |
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?? | |
 Polyfet RF Devices |
F1012 |
38Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
 Zhengzhou Winsen El... |
F1012 |
461Kb/4P |
Micro Flow Sensor |
| F1013 |
475Kb/5P |
Micro Flow Sensor | |
|
Polyfet RF Devices |
F1014 |
38Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1015 |
38Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | |
|
Littelfuse |
F1015 |
178Kb/2P |
ATO Blade Fuse Rated 32V |
| F1015-ND |
178Kb/2P |
ATO Blade Fuse Rated 32V | |
|
Polyfet RF Devices |
F1016 |
41Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
Littelfuse |
F1016 |
178Kb/2P |
ATO Blade Fuse Rated 32V |
 Turck, Inc. |
F1016 |
191Kb/1P |
Compact I/O station for DeviceNet test us-english 2023-07-21 |
|
Littelfuse |
F1016-ND |
178Kb/2P |
ATO Blade Fuse Rated 32V |
| F1017 |
178Kb/2P |
ATO Blade Fuse Rated 32V | |
| F1017-ND |
178Kb/2P |
ATO Blade Fuse Rated 32V | |
|
Polyfet RF Devices |
F1018 |
38Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
Littelfuse |
F1018 |
178Kb/2P |
ATO Blade Fuse Rated 32V |
| F1018-ND |
178Kb/2P |
ATO Blade Fuse Rated 32V | |
|
Polyfet RF Devices |
F1019 |
38Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
Littelfuse |
F1019 |
178Kb/2P |
ATO Blade Fuse Rated 32V |
| F1019-ND |
178Kb/2P |
ATO Blade Fuse Rated 32V | |
|
Powerbox |
F101CT |
564Kb/3P |
1.5-10 WATTS SINGLE OUTPUT DC/DC INDUSTRIAL |
 Vishay Siliconix |
F101K25Y5RN6TJ5R |
420Kb/7P |
Ceramic Disc Capacitors Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC Revision: 07-Jan-10 |
| F101K33Y5RR6.K7 |
420Kb/7P |
Ceramic Disc Capacitors Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC Revision: 07-Jan-10 |
|
| F101K33Y5RR6.K7. |
420Kb/7P |
Ceramic Disc Capacitors Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC Revision: 07-Jan-10 |