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100B200KT500XT 검색 결과
Premium 공급 업체
프리미엄 A
Element14
| 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Rohs | Q'ty | 가격 | 바로 구매 |
100B
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BEEHIVE ELECTRONICS |  |
RF Test Component Type:Connector; Frequency:3.1GHz; Impedance:50ohm; Continuous RF Input Power Max:- | ROHS COMPLIANT | 1+ : $170.26 5+ : $164.49 |
바로 구매
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|
100B101JW500XT
|
KYOCERA AVX | |
RF CAPACITOR, 100PF, 500VDC, 1111; Capacitance:100pF; Voltage Rating:500VDC; Product Range:Porcelain | ROHS COMPLIANT | 94 | 1+ : $10.36 2+ : $9.7 3+ : $9.03 5+ : $8.36 10+ : $7.69 20+ : $7.54 |
바로 구매
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프리미엄 B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Q'ty | 데이터 코드 | 위치 | Reg 날짜 | RFQ |
| 100B200JT500X |
|
SMD | 41499 | 2020+ | Pb-Free | 26-09-18 |
문의
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| 100B200JT500XT | ATC |
|
SMD | 1878 | 2020+ | Pb-Free | 26-09-18 |
문의
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| 100B200JW500XT | WSN |
|
SMD | 195999 | 2020+ | Pb-Free | 26-09-18 |
문의
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info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Q'ty | 데이터 코드 | 위치 | Reg 날짜 | RFQ |
| 100B200KT500XT | ATC-Americ |
|
SMD | 3942 | 2020+ | Instock | 26-09-18 |
문의
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일반
| 공급 업체 | 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Q'ty | 데이터 코드 | 위치 | Reg 날짜 | RFQ |
| Shenzhen Augswan Electronics Co., LTD. | 100B200KT500XT | ATC-AMERIC |
|
SMD | 19510 | 21+ | Stock | 2023-07-25 |
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| NegoICCo. |
100B200KT500XT
|
ATC-AMERIC |
|
SMD | 19999 | 2022+ | INSTOCK | 2026-08-21 |
문의
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| Microtranik,Components,Inc. | 100B200KT500XT | Distributor |
|
for more pls inquire us now | 150170 | 17+RoHS | New instock, best quality | 2026-08-10 |
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| Transcrui Microcircuit Corporation | 100B200KT500XT | Distributor |
|
Sincere cooperation, Create brilliant | 150170 | 18+RoHS | Selected quality，Affordable pr | 2024-09-23 |
문의
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| Evatronix(HK) Electronics Trade Inc | 100B200KT500XT | ON |
|
Original Parts&RoHS | 63480 | 18+ | Prompt delivery ,Best quality | 2024-09-24 |
문의
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| IC Agent Electronics Ins | 100B200KT500XT | ATC-Americ |
|
SMD | 3942 | 2020+ | Instock | 2022-10-29 |
문의
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| Hongkong Inductors Limited | 100B200KT500XT | American Technical Ceramics (A |
|
n/a | 69200 | n/a | n/a | 2020-03-24 |
문의
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| Hongkong Inductors Limited | 100B200KT500XT | American Technical Ceramics (A |
|
n/a | 69200 | n/a | n/a | 2020-03-02 |
문의
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| Evatronix(HK) Technology Limited | 100B200KT500XT | NSC |
|
Original&durability | 52820 | 19+RoHS | Ample Supply,timely delivery | 2023-04-22 |
문의
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1
100B200KT500XT 데이터 시트
| MFG | 부품 번호 | 데이터 시트 | 부품 설명 |
 Vishay Siliconix |
100B2130130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2130222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2130470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
 NXP Semiconductors |
100B220JCA500X |
763Kb/20P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006 |
| 100B220JCA500X |
955Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011 |
|
 Freescale Semicondu... |
100B220JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
Vishay Siliconix |
100B2222130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2222222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2222470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
|
Freescale Semicondu... |
100B240JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
Vishay Siliconix |
100B2470130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2470222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2470470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
 Advanced Semiconduc... |
100B270JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B2R0JP500X |
2Mb/5P |
Silicon MOSFET Technology | |
|
NXP Semiconductors |
100B2R2BW |
694Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006 |
| 100B2R2BW |
693Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006 |
|
|
Advanced Semiconduc... |
100B2R4JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B2R4JP500X |
1Mb/8P |
All Gold Bonding Scheme | |
|
NXP Semiconductors |
100B2R7BT500XT |
424Kb/12P |
RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Rev. 0, 02/2021 |
|
Freescale Semicondu... |
100B2R7CP500X |
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
|
NXP Semiconductors |
100B2R7CP500X |
670Kb/16P |
RF LDMOS Wideband Integrated Power Amplifier Rev. 4, 5/2006 |