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100B161MT300XT 검색 결과
Premium 공급 업체
프리미엄 A
Element14
| 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Rohs | Q'ty | 가격 | 바로 구매 |
100B101JW500XT
|
KYOCERA AVX |  |
RF CAPACITOR, 100PF, 500VDC, 1111; Capacitance:100pF; Voltage Rating:500VDC; Product Range:Porcelain | ROHS COMPLIANT | 94 | 1+ : $10.36 2+ : $9.7 3+ : $9.03 5+ : $8.36 10+ : $7.69 20+ : $7.54 |
바로 구매
|
프리미엄 B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Q'ty | 데이터 코드 | 위치 | Reg 날짜 | RFQ |
| 100B160FT500XT | ATC |
|
SMD | 150999 | 2020+ | Pb-Free | 26-09-17 |
문의
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Q'ty | 데이터 코드 | 위치 | Reg 날짜 | RFQ |
| 100B161MT300XT | ATC/Americ |
|
SMD | 436800 | 2020+ | Instock | 26-09-17 |
문의
|
일반
| 공급 업체 | 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Q'ty | 데이터 코드 | 위치 | Reg 날짜 | RFQ |
| Microtranik,Components,Inc. | 100B161MT300XT | Distributor |
|
for more pls inquire us now | 150450 | 17+RoHS | New instock, best quality | 2026-08-10 |
문의
|
| Transcrui Microcircuit Corporation | 100B161MT300XT | Distributor |
|
Sincere cooperation, Create brilliant | 150450 | 18+RoHS | Selected quality，Affordable pr | 2024-09-23 |
문의
|
| Evatronix(HK) Electronics Trade Inc | 100B161MT300XT | ON |
|
Original Parts&RoHS | 63580 | 18+ | Prompt delivery ,Best quality | 2024-09-24 |
문의
|
| IC Agent Electronics Ins | 100B161MT300XT | ATC/Americ |
|
SMD | 436800 | 2020+ | Instock | 2022-10-29 |
문의
|
| Hongkong Inductors Limited | 100B161MT300XT | American Technical Ceramics (A |
|
n/a | 83200 | n/a | n/a | 2020-03-24 |
문의
|
| Hongkong Inductors Limited | 100B161MT300XT | American Technical Ceramics (A |
|
n/a | 83200 | n/a | n/a | 2020-03-02 |
문의
|
| Evatronix(HK) Technology Limited | 100B161MT300XT | NSC |
|
Original&durability | 53560 | 19+RoHS | Ample Supply,timely delivery | 2023-04-22 |
문의
|
1
100B161MT300XT 데이터 시트
| MFG | 부품 번호 | 데이터 시트 | 부품 설명 |
 NXP Semiconductors |
100B100GW |
694Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006 |
| 100B100GW |
693Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006 |
|
 Freescale Semicondu... |
100B100JCA500X |
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
|
NXP Semiconductors |
100B100JCA500X |
763Kb/20P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006 |
| 100B100JCA500X |
955Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011 |
|
| 100B100JT500XT |
294Kb/8P |
RF Power GaN Transistor | |
 Winchester Electron... |
100B1016P95 |
393Kb/5P |
MARC REMOVABLE PIN & SOCKET CONTACTS |
|
Freescale Semicondu... |
100B101JP500X |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
 Advanced Semiconduc... |
100B101JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B101JP500X |
1Mb/8P |
All Gold Bonding Scheme | |
|
NXP Semiconductors |
100B102JCA500X |
763Kb/20P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006 |
| 100B102JCA500X |
955Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011 |
|
|
Freescale Semicondu... |
100B102JP500X |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
 Vishay Siliconix |
100B110KBO1 |
289Kb/4P |
1 5/16 (33.3 mm) Single Turn Wirewound Precision Potentiometer Revision: 28-Jun-07 |
| 100B1130130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B1130222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B1130470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
|
Freescale Semicondu... |
100B120JP500X |
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
|
NXP Semiconductors |
100B120JP500X |
670Kb/16P |
RF LDMOS Wideband Integrated Power Amplifier Rev. 4, 5/2006 |
| 100B120JT500XT |
427Kb/20P |
Airfast RF Power LDMOS Transistor Rev. 0-March 2021 |
|
|
Freescale Semicondu... |
100B121JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
Vishay Siliconix |
100B1222130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B1222222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B1222470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
|
Freescale Semicondu... |
100B130JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
Vishay Siliconix |
100B1470130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B1470222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B1470470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
|
Advanced Semiconduc... |
100B150JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B150JP500X |
1Mb/8P |
All Gold Bonding Scheme |