| MFG |
부품 번호 |
데이터 시트 |
부품 설명 |
 NXP Semiconductors |
100B100GW |
694Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006 |
| 100B100GW |
693Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006 |
 Freescale Semicondu... |
100B100JCA500X |
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
 NXP Semiconductors |
100B100JCA500X |
763Kb/20P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006 |
| 100B100JCA500X |
955Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011 |
| 100B100JT500XT |
294Kb/8P |
RF Power GaN Transistor |
 Winchester Electron... |
100B1016P95 |
393Kb/5P |
MARC REMOVABLE PIN & SOCKET CONTACTS |
 Freescale Semicondu... |
100B101JP500X |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
 Advanced Semiconduc... |
100B101JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B101JP500X |
1Mb/8P |
All Gold Bonding Scheme |
 NXP Semiconductors |
100B102JCA500X |
763Kb/20P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006 |
| 100B102JCA500X |
955Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011 |
 Freescale Semicondu... |
100B102JP500X |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
 Vishay Siliconix |
100B110KBO1 |
289Kb/4P |
1 5/16 (33.3 mm) Single Turn Wirewound Precision Potentiometer Revision: 28-Jun-07 |
| 100B1130130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B1130222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B1130470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
 Freescale Semicondu... |
100B120JP500X |
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
 NXP Semiconductors |
100B120JP500X |
670Kb/16P |
RF LDMOS Wideband Integrated Power Amplifier Rev. 4, 5/2006 |
| 100B120JT500XT |
427Kb/20P |
Airfast RF Power LDMOS Transistor Rev. 0-March 2021 |
 Freescale Semicondu... |
100B121JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
 Vishay Siliconix |
100B1222130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B1222222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B1222470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
 Freescale Semicondu... |
100B130JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
 Vishay Siliconix |
100B1470130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B1470222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B1470470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
 Advanced Semiconduc... |
100B150JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B150JP500X |
1Mb/8P |
All Gold Bonding Scheme |