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모든 결과 ( 3,314,868 )
T로 시작 ( 223,118 )
| 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Q'ty | 데이터 코드 | 위치 | Reg 날짜 | RFQ |
| TC58NYG1S8HBAI6 | TOSHIBA |
|
BGA | 8183 | 20+PB | Pb-Free | 26-10-14 |
문의
|
| TC58NYG2S5HBAI6 | TOSHIBA |
|
BGA | 35000 | 20+PB | Pb-Free | 26-10-14 |
문의
|
| TC58NYG0S3EBAI4JRH | TOSHIBA |
|
BGA | 35000 | 20+PB | Pb-Free | 26-10-14 |
문의
|
| TC58NYG0S3HBAI6JAH | TOSHIBA |
|
BGA | 35000 | 20+PB | Pb-Free | 26-10-14 |
문의
|
| TC58NYG1S3EBAI5LRH | TOSHIBA |
|
BGA | 35000 | 20+PB | Pb-Free | 26-10-14 |
문의
|
| TC58NYG1S3HBAI6JDH | TOSHIBA |
|
BGA | 35000 | 20+PB | Pb-Free | 26-10-14 |
문의
|
| TC58NYG1S8HBAI6JD2 | TOSHIBA |
|
BGA | 35000 | 20+PB | Pb-Free | 26-10-14 |
문의
|
| TC58NYG2S3EBAI5LR0 | TOSHIBA |
|
SMD | 35000 | 20+PB | Pb-Free | 26-10-14 |
문의
|
| TC58NYG2S3ETAI0B3H | TOSHIBA |
|
Originalnew | 30000 | 2016 | Instock | 26-10-14 |
문의
|
| TC58NYG1S3HBAI4_TRAY | TO2 |
|
210 | 17500 | 20+PB | Pb-Free | 26-10-14 |
문의
|
| TC58NYG1S8HBAI6/2GBIT | SPREADTRUM |
|
BGA | 10500 | 20+PB | Pb-Free | 26-10-14 |
문의
|
1
TC58NYGOS3EBA14 데이터 시트
| MFG | 부품 번호 | 데이터 시트 | 부품 설명 |
 Toshiba Semiconduct... |
TC58NYG0S3EBAI4 |
487Kb/65P |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58NYG0S3HBAI4 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
| TC58NYG0S3HBAI4 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance | |
| TC58NYG0S3HBAI6 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
 KIOXIA Corporation |
TC58NYG0S3HBAI6 |
482Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NYG0S3HBAI6 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NYG1S3EBAI4 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
| TC58NYG1S3EBAI5 |
489Kb/65P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M 횞 8 BIT) CMOS NAND E2PROM | |
|
KIOXIA Corporation |
TC58NYG1S3HBAI4 |
515Kb/66P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NYG1S3HBAI4 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NYG1S3HBAI6 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
|
KIOXIA Corporation |
TC58NYG1S3HBAI6 |
577Kb/66P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NYG1S3HBAI6 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NYG2S0FBAI4 |
1Mb/71P |
4 GBIT (512M X 8 BIT) CMOS NAND E2 PROM 2012-09-01 |
|
|
KIOXIA Corporation |
TC58NYG2S0HBAI4 |
1Mb/66P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NYG2S0HBAI4 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
|
KIOXIA Corporation |
TC58NYG2S0HBAI6 |
1Mb/66P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NYG2S0HBAI6 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NYG2S3EBAI5 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
| TC58NYG2S3ETA00 |
504Kb/70P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM 2010-07-13C |
|
| TC58NYG3S0FBAID |
39Kb/1P |
Semiconductor & Storge Products Company |