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모든 결과 ( 3,314,868 )
N로 시작 ( 76,072 )
| 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Q'ty | 데이터 코드 | 위치 | Reg 날짜 | RFQ |
| NE5520 | PHIL |
|
TSOP | 28000 | 2016 | Instock | 26-09-23 |
문의
|
| NE5521 | PHILIPS |
|
DIP | 700 | 20+PB | Pb-Free | 26-09-23 |
문의
|
| NE5526 | PHILIPS |
|
SSOP | 21301 | 20+PB | Pb-Free | 26-09-23 |
문의
|
| NE5520D | PHI |
|
SOP | 22150 | 2016 | Instock | 26-09-23 |
문의
|
| NE5520N | PHI/S |
|
DIP/14 | 20000 | 2016 | Instock | 26-09-23 |
문의
|
| NE5521D | PHILIPS |
|
SOP-16 | 45000 | 2016 | Instock | 26-09-23 |
문의
|
| NE5521N | DIP |
|
PHILIPS | 24500 | 2016 | Instock | 26-09-23 |
문의
|
| NE5521ID | PHILIPS |
|
SOP16 | 22428 | 20+PB | Pb-Free | 26-09-23 |
문의
|
| NE5520379A | NEC |
|
Original&New | 26000 | 2013+ | Instock! | 26-09-23 |
문의
|
| NE552R479A | RoHs |
|
Original&New | 15000 | 2016 | Instock | 26-09-23 |
문의
|
| NE552R679A-A | RENESAS |
|
79A | 140 | 20+PB | Pb-Free | 26-09-23 |
문의
|
| NE552R679AT1A | N/A |
|
Original&new | 33550 | 2016 | Instock | 26-09-23 |
문의
|
1
NE5523079A 데이터 시트
| MFG | 부품 번호 | 데이터 시트 | 부품 설명 |
 NEC |
NE5520279A |
166Kb/7P |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
 California Eastern ... |
NE5520279A |
351Kb/8P |
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
 Renesas Technology ... |
NE5520279A |
290Kb/11P |
SILICON POWER MOS FET 2003 |
|
NEC |
NE5520279A-T1 |
166Kb/7P |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
|
Renesas Technology ... |
NE5520279A-T1 |
290Kb/11P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE5520279A-T1-A |
351Kb/8P |
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
|
Renesas Technology ... |
NE5520279A-T1A |
290Kb/11P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE5520379A |
390Kb/9P |
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET |
|
Renesas Technology ... |
NE5520379A |
295Kb/13P |
SILICON POWER MOS FET 2003 |
| NE5520379A-T1 |
295Kb/13P |
SILICON POWER MOS FET 2003 |
|
| NE5520379A-T1A |
295Kb/13P |
SILICON POWER MOS FET 2003 |
|
|
California Eastern ... |
NE5520379A-T1A-A |
390Kb/9P |
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET |
 NXP Semiconductors |
NE5521 |
69Kb/5P |
LVDT signal conditioner August 31, 1994 |
| NE5521D |
69Kb/5P |
LVDT signal conditioner August 31, 1994 |
|
| NE5521N |
69Kb/5P |
LVDT signal conditioner August 31, 1994 |
|
|
California Eastern ... |
NE552R479A |
495Kb/9P |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |
| NE552R479A |
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS | |
|
Renesas Technology ... |
NE552R479A |
291Kb/11P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE552R479A-T1 |
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS |
|
Renesas Technology ... |
NE552R479A-T1 |
291Kb/11P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE552R479A-T1-A |
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS |
| NE552R479A-T1A |
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS | |
|
Renesas Technology ... |
NE552R479A-T1A |
291Kb/11P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE552R479A-T1A-A |
495Kb/9P |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |
|
NEC |
NE552R679A |
68Kb/9P |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
|
Renesas Technology ... |
NE552R679A |
290Kb/11P |
SILICON POWER MOS FET 2003 |
|
NEC |
NE552R679A-T1 |
68Kb/9P |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
|
Renesas Technology ... |
NE552R679A-T1 |
290Kb/11P |
SILICON POWER MOS FET 2003 |
|
NEC |
NE552R679A-T1A |
68Kb/9P |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
|
Renesas Technology ... |
NE552R679A-T1A |
290Kb/11P |
SILICON POWER MOS FET 2003 |