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모든 결과 ( 3,314,868 )
G로 시작 ( 85,977 )
| 부품 번호 | MFG | 데이터 시트 | 부품 설명 | Q'ty | 데이터 코드 | 위치 | Reg 날짜 | RFQ |
| GT10J | N/A |
|
Originalnew | 33550 | 2016 | Instock | 26-09-24 |
문의
|
| GT10J301 | TOSHIBA |
|
TO-3P(N) | 140000 | 20+PB | Pb-Free | 26-09-24 |
문의
|
| GT10J303 | TOSHIBA |
|
TO-220NIS | 45000 | 2016 | Instock | 26-09-24 |
문의
|
| GT10J312 | TOSHIBA |
|
TO-220 | 386750 | 20+PB | Pb-Free | 26-09-24 |
문의
|
| GT10J321 | TOSHIBA |
|
TO-220 | 386750 | 20+PB | Pb-Free | 26-09-24 |
문의
|
| GT101 | HAMAT |
|
SIP | 1477 | 20+PB | Pb-Free | 26-09-24 |
문의
|
| GT103 | HAMAT |
|
SIP | 1477 | 20+PB | Pb-Free | 26-09-24 |
문의
|
| GT106 | HAMAT |
|
SIP | 1477 | 20+PB | Pb-Free | 26-09-24 |
문의
|
| GT1081 | PB-FREE |
|
ROSH&New | 42000 | 2016 | Instock | 26-09-24 |
문의
|
| GT1083 | RoHs |
|
Original&New | 15000 | 2016 | Instock | 26-09-24 |
문의
|
| GT10Q101 | TOSHIBA |
|
TO-3P(N) | 386750 | 20+PB | Pb-Free | 26-09-24 |
문의
|
| GT10Q301 | TOSHIBA |
|
TO-3P | 35000 | 2016 | Instock | 26-09-24 |
문의
|
| GT101-30S-HR11 | LG |
|
Original&New | 28000 | 2016 | Instock | 26-09-24 |
문의
|
1
GT10J 데이터 시트
| MFG | 부품 번호 | 데이터 시트 | 부품 설명 |
 Toshiba Semiconduct... |
GT10J301 |
321Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| GT10J301 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT10J301_06 |
493Kb/7P |
HIGH POWER SWITCHING APPLICATIONS | |
| GT10J303 |
291Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
| GT10J303 |
473Kb/7P |
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS | |
| GT10J303 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT10J303_06 |
473Kb/7P |
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS | |
| GT10J311 |
322Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
| GT10J312 |
295Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
| GT10J312 |
509Kb/7P |
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS | |
| GT10J312 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT10J312_06 |
509Kb/7P |
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS | |
| GT10J321 |
158Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT | |
| GT10J321 |
204Kb/7P |
Silicon N Channel IGBT High Power Switching Applications | |
| GT10J321 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT10J321_06 |
204Kb/7P |
Silicon N Channel IGBT High Power Switching Applications |