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VF20M10331K Risultati di ricerca
Premium Fornitore
Premium A
Element14
| Numero parte | Mfg | Scheda dati | Descrizione | Rohs | Q'ty | Prezzo | Acquista ora |
VF2F2
|
FTDI |  |
BACKUP FUNCTION, REF DESIGN; Silicon Manufacturer:FTDI; Silicon Core Number:VNC1L; Kit Application T | ROHS COMPLIANT | 1+ : $32.39 |
Acquista ora
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| VF20M10331K | AVX |
|
DIP | 247599 | 2020+ | Pb-Free | 26-11-05 |
Inchiesta
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| VF20M10331K | AVX |
|
DIP | 575400 | 2020+ | Instock | 26-11-05 |
Inchiesta
|
Di base
| Fornitore | Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| IC Agent Electronics Ins | VF20M10331K | AVX |
|
DIP | 575400 | 2020+ | Instock | 2026-11-03 |
Inchiesta
|
| RANTLE EAST ELECTRONIC > www.digsemi.com | VF20M10331K | AVX |
|
DIP | 64000 | ICRFQ | 2025-07-24 |
Inchiesta
|
|
| FEDERAL INDUSTRY CO. | VF20M10331K | AVX |
|
DIP | 247599 | 2020+ | Pb-Free | 2026-11-03 |
Inchiesta
|
1
VF20M10331K Scheda dati
| Mfg | Numero parte | Scheda dati | Descrizione |
 Vishay Siliconix |
VF20M120C |
612Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 11-Jan-12 |
| VF20M120C-M3 |
91Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 02-Dec-13 |
|
| VF20M120C-M3 |
132Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VF20M120C-M3/4W |
612Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 11-Jan-12 |
|
| VF20M120C-M3_15 |
81Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 02-Dec-13 |
|
| VF20M120C-M3_V01 |
132Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |