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QS888615P Risultati di ricerca
Premium Fornitore
Premium A
Element14
| Numero parte | Mfg | Scheda dati | Descrizione | Rohs | Q'ty | Prezzo | Acquista ora |
QS186E
|
BANNER ENGINEERING |  |
SENSOR, TX, 30MM, PNP, CABLE; Sensing Range Max:20m; Sensing Method:Through Beam; Sensor Output:-; P | NOT APPLICABLE | 1+ : $99.21 5+ : $95.85 10+ : $92.71 25+ : $90.86 50+ : $89.01 |
Acquista ora
|
|
QS30EQ
|
BANNER ENGINEERING | |
SENSOR, TX, 60M, PNP, M12; Sensing Range Max:60m; Sensing Method:Through Beam; Sensor Output:-; Prod | NOT APPLICABLE | 1+ : $155.42 |
Acquista ora
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
QS8886-20P
|
QSI |
|
DIP-24 | 7850 | 2016 | Instock | 26-10-08 |
Inchiesta
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| QS8886-15P | QSI |
|
DIP-24 | 1160 | 2020+ | Instock | 26-10-08 |
Inchiesta
|
|
QS8886-20P
|
QSI |
|
DIP-24 | 1160 | 2020+ | Instock | 26-10-08 |
Inchiesta
|
Di base
| Fornitore | Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| MicrotranikComponents,Inc | QS888615P | Distributor |
|
for more pls inquire us now | 215750 | 17+RoHS | New instock, best quality | 2026-09-29 |
Inchiesta
|
| Transcrui Microcircuit Corporation | QS888615P | TI |
|
Original Parts&RoHS | 60900 | 2019+ | NEWSTOCK,HOT SALE!!! | 2024-09-23 |
Inchiesta
|
| Evatronix(HK) Electronics Trade Inc | QS888615P | NS |
|
Original Parts, Quality excellent | 86810 | 18+RoHS | Instock，Rush delivery | 2024-09-24 |
Inchiesta
|
| SINGAPORE INTEXIM SHARES (CHINA)CO.,LTD | QS888615P | IDT |
|
10+ | 9000 | 10+ | 2026-09-01 |
Inchiesta
|
|
| TRIPLE TECHNOLOGY COMPONENTS LIMITED | QS888615P |
|
2524 | 2013-12-05 |
Inchiesta
|
1
QS888615P Scheda dati
| Mfg | Numero parte | Scheda dati | Descrizione |
 Rohm |
QS8F2 |
1Mb/7P |
1.5V Drive Pch MOSFET + PNP TRANSISTOR |
| QS8J1 |
190Kb/6P |
1.5V Drive Pch+Pch MOSFET | |
| QS8J11 |
1Mb/7P |
1.5V Drive Pch + Pch MOSFET | |
| QS8J12 |
1Mb/7P |
1.5V Drive Pch + Pch MOSFET | |
| QS8J13 |
2Mb/12P |
Small Surface Mount Package | |
| QS8J2 |
377Kb/6P |
1.5V Drive Pch MOSFET | |
| QS8J4 |
345Kb/6P |
4V Drive Pch + Pch MOSFET | |
| QS8J4FRA |
1Mb/14P |
Middle Power MOSFET | |
| QS8J4HZG |
2Mb/15P |
-30V Pch + Pch Small Signal MOSFET | |
| QS8J5 |
285Kb/6P |
4V Drive Pch + Pch MOSFET | |
| QS8K11 |
1Mb/7P |
4V Drive Nch + Nch MOSFET | |
| QS8K12 |
1Mb/7P |
4V Drive Nch + Nch MOSFET | |
| QS8K13 |
1Mb/7P |
4V Drive Nch + Nch MOSFET | |
| QS8K2 |
374Kb/6P |
2.5V Drive Nch MOSFET | |
| QS8K21 |
230Kb/6P |
4V Drive Nch + Nch MOSFET | |
| QS8K2FRA |
1Mb/14P |
30V Nch + Nch Middle Power MOSFET | |
| QS8K2HZG |
2Mb/15P |
30V Nch+Nch Small Signal MOSFET | |
| QS8K51 |
2Mb/13P |
100V Nch+Nch Small Signal MOSFET | |
| QS8M11 |
1Mb/9P |
4V Drive Nch + Pch MOSFET | |
 Unisonic Technologi... |
QS8M11 |
218Kb/6P |
DUAL ENHANCEMENT MODE |
| QS8M11G-S08-R |
218Kb/6P |
DUAL ENHANCEMENT MODE | |
| QS8M11G-S08-T |
218Kb/6P |
DUAL ENHANCEMENT MODE | |
| QS8M11L-S08-R |
218Kb/6P |
DUAL ENHANCEMENT MODE | |
| QS8M11L-S08-T |
218Kb/6P |
DUAL ENHANCEMENT MODE | |
 SHENZHEN DOINGTER S... |
QS8M11L-S08-T |
3Mb/8P |
N-Channel and P-Channel MOSFET useadvanced trench Technology |
|
Rohm |
QS8M12 |
1Mb/11P |
4V Drive Nch + Pch MOSFET |
| QS8M12TCR |
743Kb/11P |
4V Drive Nch Pch MOSFET | |
| QS8M13 |
1Mb/11P |
4V Drive Nch + Pch MOSFET | |
| QS8M51 |
1Mb/11P |
4V Drive Nch + Pch MOSFET | |
| QS8M51FRA |
2Mb/22P |
Middle Power MOSFET |