Engilsh
中文
한국어
Deutsch
日本語
Русский
Español
Français
Italiano
Português
polski
Tiếng Việt
NAND1GW3B2CZA6 Risultati di ricerca
Premium Fornitore
Fornitore
ALL NEW SEMI Electronics Co., LIMITED
Asia Military Components Trading Co., Ltd.
Shenzhen Augswan Electronics Co., LTD.
NegoICCo.
TAIWAN DBA INT’L CORPORATION LTD.
HongDa Electronics Co.,Ltd
IC Agent Electronics Ins
ICHOME Industrial Co., Ltd.
JAK ELECTRONICS LIMITED
MIL-GRADE SEMICONDUCTORS PTE. LTD
NOVOT Electronics Trading Co., LTD.
SEMILOOK TECH. CO., LTD.
SEMITONE CO.,LTD.
SUNTRONIC ELECTRONICS CO
TOKYOSUPERDEVICECO.,LTD
Wintech Components Limited
Yiner(Shenzhen)Electronics Co., Ltd.
Premium A
Element14
| Numero parte | Mfg | Scheda dati | Descrizione | Rohs | Q'ty | Prezzo | Acquista ora |
NAN0T100AS
|
CK COMPONENTS |  |
TACTILE SWITCH, 0.02A, 15VDC, 100GF, SMD; Product Range:NanoT Series; Actuator Orientation:Top Actua | ROHS COMPLIANT | 7,709 | 1+ : $0.515 50+ : $0.476 100+ : $0.452 |
Acquista ora
|
|
NAN0T160AS.
|
CK COMPONENTS | |
TACTILE SWITCH, 0.02A, 15VDC, 160GF, SMD; Product Range:Nano T Series; Actuator Orientation:Top Actu | ROHS COMPLIANT | 7,726 | 1+ : $0.515 50+ : $0.476 100+ : $0.474 |
Acquista ora
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| NAND1FW3B2BN6 | N/A |
|
Original&New | 82500 | 2011+Rohs | Pb-free&Instock | 26-10-05 |
Inchiesta
|
| NAND128W3A08N6 | N/A |
|
Original&New | 82500 | 2011+Rohs | Pb-free&Instock | 26-10-05 |
Inchiesta
|
NAND128W3A2BN6
|
ST |
|
TSOP | 105 | 20+PB | Pb-Free | 26-10-05 |
Inchiesta
|
| NAND128W3A0BN6E | MICRON |
|
Originalnew | 25000 | 2016 | Instock | 26-10-05 |
Inchiesta
|
|
NAND128W3A2BN6E
|
MICRON |
|
TSOP48 | 686 | 20+PB | Pb-Free | 26-10-05 |
Inchiesta
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| NAND1GW3B2CZA6 | ST |
|
BGA | 560 | 20+PB | Pb-Free | 26-10-05 |
Inchiesta
|
Di base
| Fornitore | Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| ALL NEW SEMI Electronics Co., LIMITED | NAND1GW3B2CZA6 | ST |
|
BGA | 100 | 19+ | 2026-09-30 |
Inchiesta
|
|
| Asia Military Components Trading Co., Ltd. | NAND1GW3B2CZA6 | ST |
|
BGA | 900 | NEW+ | STOCK | 2026-05-09 |
Inchiesta
|
| Shenzhen Augswan Electronics Co., LTD. | NAND1GW3B2CZA6 | ST |
|
BGA | 4506 | 21+ | Stock | 2023-07-25 |
Inchiesta
|
| NegoICCo. |
NAND1GW3B2CZA6
|
ST |
|
BGA | 16666 | 2022+ | IN STOCK | 2026-08-21 |
Inchiesta
|
| TAIWAN DBA INT’L CORPORATION LTD. | NAND1GW3B2CZA6 | ST |
|
BGA | 580 | NEWD/C | STOCK | 2022-10-22 |
Inchiesta
|
| HongDa Electronics Co.,Ltd | NAND1GW3B2CZA6 | ST |
|
BGA | 88500 | 2016 | In.USA.Stock | 2016-07-29 |
Inchiesta
|
| IC Agent Electronics Ins | NAND1GW3B2CZA6 | ST |
|
BGA | 560 | 20+PB | Pb-Free | 2022-10-29 |
Inchiesta
|
| ICHOME Industrial Co., Ltd. | NAND1GW3B2CZA6 | ST |
|
BGA | 285 | NEW+ | INSTOCK | 2026-05-09 |
Inchiesta
|
| JAK ELECTRONICS LIMITED | NAND1GW3B2CZA6 | Original |
|
30 | Stock | 2019-10-30 |
Inchiesta
|
||
| MIL-GRADE SEMICONDUCTORS PTE. LTD | NAND1GW3B2CZA6 | ST |
|
BGA | 1200 | NEWD/C | OWNSTOCK | 2026-05-09 |
Inchiesta
|
| NOVOT Electronics Trading Co., LTD. | NAND1GW3B2CZA6 | ST |
|
BGA | 650 | NEW+ | STOCK | 2026-05-09 |
Inchiesta
|
| SEMILOOK TECH. CO., LTD. | NAND1GW3B2CZA6 | ST |
|
BGA | 285 | NEW+ | STOCK | 2026-05-09 |
Inchiesta
|
| SEMITONE CO.,LTD. | NAND1GW3B2CZA6 | ST |
|
BGA | 1700 | NEW+ | STOCK | 2021-12-27 |
Inchiesta
|
| SUNTRONIC ELECTRONICS CO | NAND1GW3B2CZA6 | ST |
|
BGA | 1000 | 11+ | INSTOCK | 2019-07-12 |
Inchiesta
|
| TOKYOSUPERDEVICECO.,LTD | NAND1GW3B2CZA6 | ST |
|
200 | 11+ | 2025-02-27 |
Inchiesta
|
||
| Wintech Components Limited | NAND1GW3B2CZA6 | ST |
|
BGA | 20000 | 2021+ | INSTOCK | 2023-10-18 |
Inchiesta
|
| Yiner(Shenzhen)Electronics Co., Ltd. | NAND1GW3B2CZA6-GH00B8T | ST |
|
BGA | 959500 | 15+ | 959500 | 2017-06-10 |
Inchiesta
|
1
NAND1GW3B2CZA6 Scheda dati
| Mfg | Numero parte | Scheda dati | Descrizione |
 STMicroelectronics |
NAND128-A |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND128R3A |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AN1 |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AN1E |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AN1F |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AN1T |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AN6 |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AN6E |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AN6F |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AN6T |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AV1 |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AV1E |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AV1F |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AV1T |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AV6 |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AV6E |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AV6F |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AV6T |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZA1 |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZA1E |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZA1F |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZA1T |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZA6 |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZA6E |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZA6F |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZA6T |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZB1 |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZB1E |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZB1F |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories | |
| NAND128R3A0AZB1T |
916Kb/57P |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |