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L2SC3356QLT1G Risultati di ricerca
Premium Fornitore
Premium A
Element14
| Numero parte | Mfg | Scheda dati | Descrizione | Rohs | Q'ty | Prezzo | Acquista ora |
L200
|
FLUKE |  |
LAMP, PROBE, FLUKE L200; Accessory Type:Probe Light; For Use With:Fluke Probes & Test Leads; Product | NOT APPLICABLE | 1+ : $74 |
Acquista ora
|
|
L250
|
LABFACILITY | |
RTD, PROBE W/LEAD, PT100, 250DEG C; Length:250mm; External Diameter:6mm; Probe/Pocket Body Material: | ROHS COMPLIANT | 4 | 1+ : $176.3 5+ : $170.33 10+ : $164.74 25+ : $161.45 50+ : $158.16 100+ : $154.86 |
Acquista ora
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| L2SC3356QALT1G | LRC |
|
SOT-23 | 420000 | 20+PB | Pb-Free | 26-10-02 |
Inchiesta
|
| L2SC3356QBLT1G | LRC |
|
SOT23 | 42000 | 20+PB | Pb-Free | 26-10-02 |
Inchiesta
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| L2SC3356QLT1G | LRC/ |
|
SOT-23 | 420000 | 2020+ | Instock | 26-10-02 |
Inchiesta
|
Di base
| Fornitore | Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| NegoICCo. |
L2SC3356QLT1G
|
LRC |
|
SOT-23 | 19688 | 2022+ | INSTOCK | 2026-08-21 |
Inchiesta
|
| IC Agent Electronics Ins | L2SC3356QLT1G | LRC/ |
|
SOT-23 | 420000 | 2020+ | Instock | 2022-10-29 |
Inchiesta
|
| Hong Kong Ri Xin International Trading Company | L2SC3356QLT1G |
|
SOT-23 | 10 | Stock | 2019-06-07 |
Inchiesta
|
||
| Yiner(Shenzhen)Electronics Co., Ltd. | L2SC3356QLT1G | LRC/ |
|
SOT23 | 989000 | 16+ROHS | NEW ORIGINAL | 2017-06-10 |
Inchiesta
|
1
L2SC3356QLT1G Scheda dati
| Mfg | Numero parte | Scheda dati | Descrizione |
 Leshan Radio Compan... |
L2SC3356LT1G |
122Kb/4P |
High-Frequency Amplifier Transistor |
| L2SC3356LT1G_15 |
145Kb/4P |
High Frequency Amplifier Transistor | |
| L2SC3356LT3G |
122Kb/4P |
High-Frequency Amplifier Transistor | |
| L2SC3356RLT1G |
644Kb/4P |
The L2SC3356RLT1 is an NPN silicon epitaxial transistor designed for | |
| L2SC3356RLT3G |
644Kb/4P |
The L2SC3356RLT1 is an NPN silicon epitaxial transistor designed for | |
| L2SC3356RWT1G |
653Kb/4P |
The L2SC3356RWT1G is an NPN silicon epitaxial transistor | |
| L2SC3356RWT3G |
653Kb/4P |
The L2SC3356RWT1G is an NPN silicon epitaxial transistor | |
| L2SC3356WT1G |
151Kb/4P |
High-Frequency Amplifier Transistor | |
| L2SC3356WT1G_15 |
173Kb/4P |
High frequency Amplifier Transistor | |
| L2SC3356WT3G |
151Kb/4P |
High-Frequency Amplifier Transistor |