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IDW10G65C5XKSA1 Risultati di ricerca
Premium Fornitore
Fornitore
Shenzhen Augswan Electronics Co., LTD.
NegoICCo.
Saipu ELECTRONICS (HK) TECHNOLOGY LTD.
TIMICOMM Electronics
Semilex Distributor
HongDaElectronicsCo.LTD
Transcrui Microcircuit Corporation
Evatronix(HK) Electronics Trade Inc
IC Agent Electronics Ins
Lvangchip(HongKong).,Limited
Semilex Electronics Direct
Unitronix Electronics Inc.
RANTLE EAST ELECTRONIC > www.digsemi.com
YI FENG Electronics Inc.
WorldLinkPartscomponentsDe
YOLONG
YXS TECHNOLOGY CO.,LTD
Premium A
Element14
| Numero parte | Mfg | Scheda dati | Descrizione | Rohs | Q'ty | Prezzo | Acquista ora |
IDW10G65C5XKSA1
|
INFINEON |  |
SILICON CARBIDE SCHOTTKY DIODE, TO-247; | ROHS COMPLIANT | 90 | 1+ : $8.17 10+ : $4.14 100+ : $3.63 500+ : $3.5 1000+ : $3.37 |
Acquista ora
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
IDW10G120C5B
|
Infineon |
|
PG-TO247-3 | 8400 | 20+PB | Pb-Free | 26-10-09 |
Inchiesta
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| IDW10G65C5XKSA1 | INFINEON |
|
PG-TO247-3 | 357 | 20+PB | Pb-Free | 26-10-09 |
Inchiesta
|
Di base
| Fornitore | Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| Shenzhen Augswan Electronics Co., LTD. | IDW10G65C5XKSA1 | Infineon |
|
DIODE SCHOTTKY 650V 10A TO247-3 | 4052 | 21+ | Stock | 2023-07-25 |
Inchiesta
|
| NegoICCo. |
IDW10G65C5XKSA1
|
INFINEON |
|
16666 | 2022+ | IN STOCK | 2026-08-21 |
Inchiesta
|
|
| Saipu ELECTRONICS (HK) TECHNOLOGY LTD. | IDW10G65C5XKSA1 | INFINEON |
|
2500 | N/A | 2023-08-17 |
Inchiesta
|
||
| TIMICOMM Electronics [ info@timicomm.com ] | IDW10G65C5XKSA1 | Infineon |
|
DIODE SCHOTTKY 650V 10A TO247-3 | 187500 | 2022+ | new STOCK | 2026-01-06 |
Inchiesta
|
| Semilex Distributor [ sales@semi-lex.com ] | IDW10G65C5XKSA1 | Infineon |
|
DIODE SCHOTTKY 650V 10A TO247-3 | 238980 | 2019+ | Can ship immediately | 2024-09-25 |
Inchiesta
|
| HongDaElectronicsCo.LTD | IDW10G65C5XKSA1 | InfineonTe |
|
DIODESCHOTTKY650V10ATO247-3 | 59850 | 2020 | 2023-05-23 |
Inchiesta
|
|
| Transcrui Microcircuit Corporation | IDW10G65C5XKSA1 | Infineon |
|
DIODE SCHOTTKY 650V 10A TO247-3 | 16933 | 2022+ | Original instock，Rush delivery | 2024-09-23 |
Inchiesta
|
| Evatronix(HK) Electronics Trade Inc | IDW10G65C5XKSA1 | Infineon |
|
DIODE SCHOTTKY 650V 10A TO247-3 | 48511 | 2020+ | HOT SALES & GLOBAL | 2024-09-24 |
Inchiesta
|
| IC Agent Electronics Ins | IDW10G65C5XKSA1 | INFINEON |
|
PG-TO247-3 | 357 | 20+PB | Pb-Free | 2022-10-29 |
Inchiesta
|
| Lvangchip(HongKong).,Limited | IDW10G65C5XKSA1 | InfineonTe |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Inchiesta
|
| Semilex Electronics Direct [ info@semi-lex.com ] | IDW10G65C5XKSA1 | Infineon |
|
DIODE SCHOTTKY 650V 10A TO247-3 | 238980 | 2020+ | Can ship immediately | 2026-09-29 |
Inchiesta
|
| Unitronix Electronics Inc. [sales@unitronix-e.com] | IDW10G65C5XKSA1 | Infineon |
|
DIODE SCHOTTKY 650V 10A TO247-3 | 157880 | 2020+ | HOT SALES | 2026-01-06 |
Inchiesta
|
| RANTLE EAST ELECTRONIC > www.digsemi.com | IDW10G65C5XKSA1 | Infineon |
|
8000 | ICRFQ | 2025-07-24 |
Inchiesta
|
||
| YI FENG Electronics Inc. | IDW10G65C5XKSA1 | Infineon |
|
DIODE SCHOTTKY 650V 10A TO247-3 | 38315 | 2022+ | New Stock,Rapid delivery | 2024-09-23 |
Inchiesta
|
| WorldLinkPartscomponentsDe |
IDW10G65C5XKSA1
|
InfineonTe |
|
DiodesTransistorsandThyristors | 75 | 2026-08-20 |
Inchiesta
|
||
| YOLONG | IDW10G65C5XKSA1 | Infineon |
|
DIODESCHOTTKY650V10ATO247-3 | 10000 | 2022 | 1week | 2022-11-28 |
Inchiesta
|
| YXS TECHNOLOGY CO.,LTD | IDW10G65C5XKSA1 | InfineonTe |
|
SiliconCarbideSchottkyThroughHoleDiode650V10A(DC)PG-TO247-3Formoreinfo | 179962 | 22+ | HongKong | 2022-12-16 |
Inchiesta
|
1
IDW10G65C5XKSA1 Scheda dati
| Mfg | Numero parte | Scheda dati | Descrizione |
 Infineon Technologi... |
IDW10G65C5 |
417Kb/2P |
650V SiC thinQ!??Generation 5 diodes 09 / 2012 |
| IDW10G65C5 |
1Mb/11P |
5t h Generation thinQ!TM 650V SiC Schottky Diode Rev. 2.2, 2013-01-15 |
|
| IDW10G65C5_12 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
|
| IDW10G65C5_V01 |
1Mb/11P |
5t h Generation thinQ!TM 650V SiC Schottky Diode Rev. 2.2, 2013-01-15 |