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GA2.2K3A1IA Risultati di ricerca
Premium Fornitore
Premium A
Element14
| Numero parte | Mfg | Scheda dati | Descrizione | Rohs | Q'ty | Prezzo | Acquista ora |
GA2.2K3A1IA
|
TE CONNECTIVITY |  |
THERMISTOR, NTC, 2.252K, RADIAL; Zero Power Resistance at 25°C:2.252kohm; Product Range:Series II; T | ROHS COMPLIANT | 362 | 1+ : $10.82 10+ : $9.33 50+ : $8.22 100+ : $7.77 200+ : $7.33 500+ : $6.89 |
Acquista ora
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| GA2.2K3A1IA | TE |
|
SENSOR | 315 | 20+PB | Pb-Free | 26-10-31 |
Inchiesta
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
GA202
|
RoHs |
|
Original&New | 20000 | 2016+ | Instock | 26-10-31 |
Inchiesta
|
|
GA200A
|
RoHs |
|
Original&New | 20000 | 2016+ | Instock | 26-10-31 |
Inchiesta
|
| GA212S | MMC |
|
9170 | 20+PB | Pb-Free | 26-10-31 |
Inchiesta
|
|
| GA2303HA | NATIONAL |
|
714 | 2020+ | Instock | 26-10-31 |
Inchiesta
|
|
| GA2-64-50 | KYSON |
|
4008 | 2020+ | Instock | 26-10-31 |
Inchiesta
|
Di base
| Fornitore | Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| Allicdata Electronics Limited | GA2.2K3A1IA | TEConnecti |
|
N/A | 69540 | 2018 | Betterpricebigqty | 2021-07-22 |
Inchiesta
|
| NegoICCo. |
GA2.2K3A1IA
|
TE |
|
NA | 19999 | 2022+ | INSTOCK | 2026-08-21 |
Inchiesta
|
| TIMICOMM Electronics [ info@timicomm.com ] | GA2.2K3A1IA | TE |
|
THERM NTC 2.252KOHM 3976K BEAD | 57300 | 2022+ | new STOCK | 2026-01-06 |
Inchiesta
|
| Semilex Distributor [ sales@semi-lex.com ] | GA2.2K3A1IA | TE |
|
THERM NTC 2.252KOHM 3976K BEAD | 146170 | 2019+ | Can ship immediately | 2024-09-25 |
Inchiesta
|
| HongDaElectronicsCo.LTD | GA2.2K3A1IA | TEConnecti |
|
THERMNTC2.252KOHM3976KBEAD | 68850 | 2020 | 2023-05-23 |
Inchiesta
|
|
| Transcrui Microcircuit Corporation | GA2.2K3A1IA | TE |
|
THERM NTC 2.252KOHM 3976K BEAD | 56273 | 2022+ | Original instock，Rush delivery | 2024-09-23 |
Inchiesta
|
| Evatronix(HK) Electronics Trade Inc | GA2.2K3A1IA | TE |
|
THERM NTC 2.252KOHM 3976K BEAD | 74284 | 2020+ | HOT SALES & GLOBAL | 2024-09-24 |
Inchiesta
|
| Semilex Electronics Direct [ info@semi-lex.com ] | GA2.2K3A1IA | TE |
|
THERM NTC 2.252KOHM 3976K BEAD | 146170 | 2020+ | Can ship immediately | 2026-09-29 |
Inchiesta
|
| Unitronix Electronics Inc. [sales@unitronix-e.com] | GA2.2K3A1IA | TE |
|
THERM NTC 2.252KOHM 3976K BEAD | 58760 | 2020+ | HOT SALES | 2026-01-06 |
Inchiesta
|
| FEDERAL INDUSTRY CO. | GA2.2K3A1IA | TE |
|
SENSOR | 315 | 20+PB | Pb-Free | 2026-10-23 |
Inchiesta
|
1
GA2.2K3A1IA Scheda dati
| Mfg | Numero parte | Scheda dati | Descrizione |
 Microsemi Corporati... |
GA200 |
140Kb/3P |
SCRs Nanosecond Switching, Planar |
 Digitron Semiconduc... |
GA200 |
173Kb/4P |
SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR |
|
Microsemi Corporati... |
GA200A |
140Kb/3P |
SCRs Nanosecond Switching, Planar |
|
Digitron Semiconduc... |
GA200A |
173Kb/4P |
SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR |
 International Recti... |
GA200HS60S |
101Kb/6P |
HALF-BRIDGE IGBT INT-A-PAK |
| GA200HS60S1 |
67Kb/6P |
HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT | |
 Vishay Siliconix |
GA200HS60S1PBF |
128Kb/6P |
"Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 200 A Revision: 03-May-10 |
|
International Recti... |
GA200NS61U |
164Kb/9P |
High Side Switch Chopper Module Ultra-Fast Speed IGBT |
| GA200SA60S |
201Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR | |
| GA200SA60S |
322Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR | |
|
Vishay Siliconix |
GA200SA60S |
182Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Revision: 22-Jul-10 |
|
International Recti... |
GA200SA60SP |
322Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Vishay Siliconix |
GA200SA60SP |
182Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Revision: 22-Jul-10 |
| GA200SA60SP |
181Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 02-Oct-12 |
|
| GA200SA60SP_V01 |
181Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 02-Oct-12 |
|
|
International Recti... |
GA200SA60U |
197Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Vishay Siliconix |
GA200SA60UP |
153Kb/8P |
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A Revision: 26-Oct-11 |
|
International Recti... |
GA200TD120U |
299Kb/10P |
HALF-BRIDGE IGBT DOUBLE INT-A-PAK |
| GA200TS60U |
303Kb/10P |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT | |
|
Vishay Siliconix |
GA200TS60UPBF |
239Kb/9P |
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A Revision: 04-May-10 |
|
International Recti... |
GA200TS60UX |
205Kb/9P |
Ultra-FastTM Speed IGBT |
|
Microsemi Corporati... |
GA201 |
140Kb/3P |
SCRs Nanosecond Switching, Planar |
|
Digitron Semiconduc... |
GA201 |
173Kb/4P |
SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR |
|
Microsemi Corporati... |
GA201A |
140Kb/3P |
SCRs Nanosecond Switching, Planar |
|
Digitron Semiconduc... |
GA201A |
173Kb/4P |
SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR |
 GeneSiC Semiconduct... |
GA20JT06-CAL |
438Kb/7P |
Normally ??OFF Silicon Carbide Junction Transistor |
| GA20JT06-CAL_15 |
804Kb/10P |
Silicon Carbide Junction Transistor | |
| GA20JT12-247 |
1Mb/12P |
Normally ??OFF Silicon Carbide Junction Transistor | |
| GA20JT12-247_15 |
1Mb/12P |
OFF Silicon Carbide Junction Transistor | |
| GA20JT12-263 |
927Kb/12P |
Normally ??OFF Silicon Carbide Junction Transistor |