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C10A10BX024UC Risultati di ricerca
Premium Fornitore
Premium A
Element14
| Numero parte | Mfg | Scheda dati | Descrizione | Rohs | Q'ty | Prezzo | Acquista ora |
C1010
|
BARRY CONTROLS |  |
MOUNT, CUP, C1000 SERIES; External Diameter:58mm; Product Range:-; SVHC:No SVHC (12-Jan-2017); Bore | ROHS COMPLIANT | 30 | 1+ : $95.72 5+ : $86.01 10+ : $79.41 |
Acquista ora
|
|
C1015
|
BARRY CONTROLS | |
MOUNT, CUP, C1000 SERIES; External Diameter:58mm; Product Range:-; SVHC:No SVHC (12-Jan-2017); Bore | ROHS COMPLIANT | 1+ : $82.28 5+ : $73.93 10+ : $68.26 |
Acquista ora
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
Di base
| Fornitore | Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| Renxim Electronic Limited. [ sales@renxim.com ] | C10A10BX24AD | NEW |
|
Original package well | 99010 | 2016+ | Globally & Immediately | 2026-01-06 |
Inchiesta
|
| RENXIM Electronics Co.,Ltd. | C10A10BX24AD | NEW |
|
Original package well | 99010 | 18+ | Globally & Immediately | 2025-08-02 |
Inchiesta
|
| SemiLex Electronics Inc. | C10A10BX24AD | IC |
|
NEW RoHS and More QTY | 36270 | 17+ | STK,Prompt delivery | 2026-09-29 |
Inchiesta
|
| Evatronix(HK) Electronics Trade Inc | C10A10BX24AD | IC |
|
NEW RoHS and More QTY | 60800 | 19+RoHS | NEWSTOCK，Rush delivery | 2024-09-24 |
Inchiesta
|
| LEOSNA IC TRADING CO. | C10A10BX24AD | IC |
|
NEW RoHS and More QTY | 62580 | 19+RoHS | Stock On Hand, Respond quickl | 2023-08-14 |
Inchiesta
|
1
C10A10BX024UC Scheda dati
| Mfg | Numero parte | Scheda dati | Descrizione |
 Anaren Microwave |
C10A50Z4 |
524Kb/2P |
Surface Mount Termination |
| C10A50Z4 |
136Kb/2P |
Surface Mount Termination | |
 NXP Semiconductors |
C10A50Z4 |
221Kb/10P |
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Rev. 2, 02/2021 |
| C10A50Z4 |
364Kb/8P |
RF Power GaN Transistor Rev. 1, 05/2021 |
|
| C10A50Z4 |
374Kb/8P |
RF Power GaN Transistor Rev. 1, 01/2021 |
|
| C10A50Z4 |
221Kb/8P |
RF Power GaN Transistor | |
| C10A50Z4 |
344Kb/8P |
RF Power GaN Transistor | |
| C10A50Z4 |
319Kb/8P |
RF Power LDMOS Transistor | |
| C10A50Z4 |
491Kb/23P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 2, 10/2022 |
|
| C10A50Z4 |
438Kb/16P |
2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR Rev. 1, 01/2022 |
|
| C10A50Z4 |
491Kb/15P |
Airfast RF Power GaN Transistor Rev. 1 - 20 March 2024 |
|
|
Anaren Microwave |
C10A50Z4_10 |
163Kb/3P |
Surface Mount Termination 10 Watts, 50廓 |
| C10A50Z4_12 |
136Kb/2P |
Surface Mount Termination |