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Tutto ( 3,314,868 )
Iniziare con Q ( 13,858 )
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| QM4001D | YKT |
|
TO-252 | 368060 | 20+PB | Pb-Free | 26-10-06 |
Inchiesta
|
| QM4002D | YKT |
|
TO-252 | 368060 | 20+PB | Pb-Free | 26-10-06 |
Inchiesta
|
| QM4003D | UBIQ |
|
TO-252 | 368060 | 20+PB | Pb-Free | 26-10-06 |
Inchiesta
|
| QM4004D | UBIQ |
|
TO-252 | 368060 | 20+PB | Pb-Free | 26-10-06 |
Inchiesta
|
| QM4006D | YKT |
|
TO-252 | 368060 | 20+PB | Pb-Free | 26-10-06 |
Inchiesta
|
| QM4002AD | QUBIQ |
|
TO252 | 4053 | 20+PB | Pb-Free | 26-10-06 |
Inchiesta
|
| QM400HAH | RoHs |
|
Original&New | 15000 | 2016 | Instock | 26-10-06 |
Inchiesta
|
| QM400HA-H | MITSUBISHI |
|
OriginalNew | 1850 | 2016 | Instock | 26-10-06 |
Inchiesta
|
| QM400HA-24 | MITSUBISHI |
|
OriginalNew | 1850 | 2016 | Instock | 26-10-06 |
Inchiesta
|
| QM400HA-2H | MITSUBISHI |
|
OriginalNew | 1850 | 2016 | Instock | 26-10-06 |
Inchiesta
|
| QM400HA12H | PB-FREE |
|
ROSH&New | 42000 | 2016 | Instock | 26-10-06 |
Inchiesta
|
| QM400HC-2H | MITSUBISHI |
|
Originalnew | 1750 | Module | Instock | 26-10-06 |
Inchiesta
|
| QM400HA-24B | MITSUBISHI |
|
Originalnew | 1750 | Module | Instock | 26-10-06 |
Inchiesta
|
| QM400HA1-2H | MITSUBISHI |
|
OriginalNew | 1850 | 2016 | Instock | 26-10-06 |
Inchiesta
|
1
QM400DY2H Scheda dati
| Mfg | Numero parte | Scheda dati | Descrizione |
 VBsemi Electronics ... |
QM4001S |
1,016Kb/9P |
P-Channel 40 V (D-S) MOSFET |
 SHENZHEN DOINGTER S... |
QM4001S |
1Mb/5P |
P-Channel MOSFET uses advanced trench technology |
 uPI Group Inc. |
QM4002AD |
267Kb/4P |
N-Ch 40V Fast Switching MOSFETs |
|
VBsemi Electronics ... |
QM4002AD |
999Kb/7P |
N-Channel 4 0-V (D-S) MOSFET |
|
SHENZHEN DOINGTER S... |
QM4002D |
636Kb/5P |
N-Channel MOSFET uses advanced trench technology |
|
VBsemi Electronics ... |
QM4002S |
1Mb/9P |
N-Channel 40-V (D-S) MOSFET |
| QM4003D |
1Mb/9P |
P-Channel 40 V (D-S) MOSFET | |
| QM4003S |
1,015Kb/9P |
P-Channel 40 V (D-S) MOSFET | |
|
SHENZHEN DOINGTER S... |
QM4003S |
1Mb/4P |
P-Channel MOSFET uses advanced trench technology |
|
uPI Group Inc. |
QM4004D |
220Kb/4P |
N-Ch 40V Fast Switching MOSFETs |
|
VBsemi Electronics ... |
QM4004S |
1Mb/9P |
N-Channel 40-V (D-S) MOSFET |
|
SHENZHEN DOINGTER S... |
QM4004S |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
| QM4006D |
2Mb/5P |
N-Channel MOSFET uses advanced trench technology | |
|
uPI Group Inc. |
QM4008K |
246Kb/4P |
N-Ch 40V Fast Switching MOSFETs |
 Mitsubishi Electric... |
QM400HA-24 |
70Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE |
| QM400HA-24B |
73Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE | |
| QM400HA-2H |
69Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE | |
| QM400HA-2HB |
75Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE | |
| QM400HA-H |
65Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE |