Inventario totale
Inventario di tendenza
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Tutto ( 3,314,868 )
Iniziare con G ( 85,977 )
| Numero parte | Mfg | Scheda dati | Descrizione | Q'ty | Datacode | Posizione | Reg Data | Rfq |
| GAN22LU-A0U-6090200 | HIRSCHMANN |
|
5237596 | 20+PB | Pb-Free | 26-11-03 |
Inchiesta
|
|
| GAN22LU-A0U-6090500 | HIRSCHMANN |
|
2029223 | 20+PB | Pb-Free | 26-11-03 |
Inchiesta
|
|
| GAN22LU-S24-6090200 | HIRSCHMANN |
|
4213370 | 20+PB | Pb-Free | 26-11-03 |
Inchiesta
|
|
| GAN22LU-S24-6090500 | HIRSCHMANN |
|
4418197 | 20+PB | Pb-Free | 26-11-03 |
Inchiesta
|
|
| GAN22LU-V21-6090200 | HIRSCHMANN |
|
4573128 | 20+PB | Pb-Free | 26-11-03 |
Inchiesta
|
|
| GAN22LU-V21-6090500 | HIRSCHMANN |
|
3558975 | 20+PB | Pb-Free | 26-11-03 |
Inchiesta
|
|
| GAN-GASKETFORIP69K | HIRSCHMANN |
|
3842944 | 20+PB | Pb-Free | 26-11-03 |
Inchiesta
|
|
| GAN31LU-A0U-6100200 | HIRSCHMANN |
|
2335011 | 20+PB | Pb-Free | 26-11-03 |
Inchiesta
|
|
| GAN31LU-A0U-6100500 | HIRSCHMANN |
|
2950969 | 20+PB | Pb-Free | 26-11-03 |
Inchiesta
|
|
| GAN-CLIPFORHOLDINGGASKET | HIRSCHMANN |
|
5047546 | 20+PB | Pb-Free | 26-11-03 |
Inchiesta
|
1
GAN22LUV216090500 Scheda dati
| Mfg | Numero parte | Scheda dati | Descrizione |
 Nexperia B.V. All r... |
GAN039-650NBB |
301Kb/10P |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package 19 April 2021 |
| GAN039-650NBBA |
301Kb/10P |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package 19 April 2021 |
|
| GAN039-650NTB |
285Kb/10P |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 19 April 2021 |
|
| GAN039-650NTBA |
284Kb/10P |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 19 April 2021 |
|
| GAN041-650WSB |
315Kb/12P |
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 12 January 2021 |
|
| GAN063-650WSA |
287Kb/11P |
650 V, 50 mΩ Gallium Nitride (GaN) FET 20 March 2020 |
|
| GAN080-650EBE |
320Kb/15P |
650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package 5 May 2023 |
|
| GAN111-650WSB |
396Kb/12P |
650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package 24 June 2024 |
|
| GAN140-650EBE |
319Kb/14P |
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package 28 April 2023 |
|
| GAN140-650FBE |
318Kb/14P |
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package 19 April 2023 |
|
| GAN190-650EBE |
7Mb/14P |
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package 19 April 2023 |
|
| GAN190-650FBE |
318Kb/14P |
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package 19 April 2023 |
|
| GAN3R2-100CBE |
299Kb/13P |
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) 27 April 2023 |
|
| GAN7R0-150LBE |
275Kb/13P |
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package 24 April 2023 |
|
| GANB4R8-040CBA |
1Mb/13P |
40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP) 7 August 2024 |
|
| GANE3R9-150QBA |
304Kb/13P |
150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 30 April 2024 |