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V10P22M3H Resultados de la búsqueda
Premium Proveedor
Premium A
Element14
| Número de parte | MFG | Ficha de datos | Descripción | ROHS | Q'ty | Precio | Comprar ahora |
V10P22C-M3/H
|
VISHAY |  |
SCHOTTKY RECTIFIER, 200V, 10A, TO-277A; | ROHS COMPLIANT | 5+ : $1.11 10+ : $0.649 100+ : $0.617 500+ : $0.482 1000+ : $0.425 5000+ : $0.417 |
Comprar ahora
|
|
|
V10P22C-M3/H
|
VISHAY | |
SCHOTTKY RECTIFIER, 200V, 10A, TO-277A; | ROHS COMPLIANT | 100+ : $0.617 500+ : $0.482 1000+ : $0.425 5000+ : $0.417 |
Comprar ahora
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Número de parte | MFG | Ficha de datos | Descripción | Q'ty | Codigo de DATOS | Ubicación | Fecha de regla | RFQ |
| V10P20-M3/86A | VIS |
|
42000 | 20+PB | Pb-Free | 26-10-31 |
Consulta
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Número de parte | MFG | Ficha de datos | Descripción | Q'ty | Codigo de DATOS | Ubicación | Fecha de regla | RFQ |
V10P20-M3/86A
|
VishaySemi |
|
TO-277ASMPC | 357 | 20+PB | Pb-Free | 26-10-31 |
Consulta
|
Básico
| Proveedor | Número de parte | MFG | Ficha de datos | Descripción | Q'ty | Codigo de DATOS | Ubicación | Fecha de regla | RFQ |
| Saipu ELECTRONICS (HK) TECHNOLOGY LTD. | V10P22-M3/H | VIAHSY |
|
1500 | D22+ | 2023-08-17 |
Consulta
|
||
| Lvangchip(HongKong).,Limited | V10P22-M3/H | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Consulta
|
| Lvangchip(HongKong).,Limited | V10P22-M3/I | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Consulta
|
| Lvangchip(HongKong).,Limited | V10P22C-M3/H | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Consulta
|
| Lvangchip(HongKong).,Limited | V10P22C-M3/I | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Consulta
|
| Lvangchip(HongKong).,Limited | V10P22CHM3/H | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Consulta
|
| Lvangchip(HongKong).,Limited | V10P22CHM3/I | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Consulta
|
| Lvangchip(HongKong).,Limited | V10P22HM3/H | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Consulta
|
| Lvangchip(HongKong).,Limited | V10P22HM3/I | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Consulta
|
1
V10P22M3H Ficha de datos
| MFG | Número de parte | Ficha de datos | Descripción |
 Vishay Siliconix |
V10P22 |
96Kb/5P |
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.6 V at IF = 5 A Revision: 01-Feb-2021 |
| V10P22-M3/H |
96Kb/5P |
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.6 V at IF = 5 A Revision: 01-Feb-2021 |
|
| V10P22-M3/I |
96Kb/5P |
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.6 V at IF = 5 A Revision: 01-Feb-2021 |
|
| V10P22C |
97Kb/5P |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2.5 A Revision: 02-Feb-2021 |
|
| V10P22C-M3/H |
97Kb/5P |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2.5 A Revision: 02-Feb-2021 |
|
| V10P22C-M3/I |
97Kb/5P |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2.5 A Revision: 02-Feb-2021 |
|
| V10P22CHM3/H |
97Kb/5P |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2.5 A Revision: 02-Feb-2021 |
|
| V10P22CHM3/I |
97Kb/5P |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2.5 A Revision: 02-Feb-2021 |
|
| V10P22HM3/H |
96Kb/5P |
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.6 V at IF = 5 A Revision: 01-Feb-2021 |
|
| V10P22HM3/I |
96Kb/5P |
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.6 V at IF = 5 A Revision: 01-Feb-2021 |