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V4P22CM3H Suchergebnisse
Premium Anbieter
Anbieter
Premium A
Element14
| Artikelnummer | Mfg | Datenblatt | Beschreibung | Rohs | Q'ty | Preis | Kaufe jetzt |
V4
|
KEMET |  |
CLAMP, CAPACITOR, 51MM; Accessory Type:Capacitor Clamp Vertical Style B; Clip Diameter:51mm; Product | ROHS COMPLIANT | 498 | 1+ : $9.55 10+ : $7.04 50+ : $6.19 100+ : $5.51 500+ : $4.76 1000+ : $4.6 |
Kaufe jetzt
|
V4LS
|
SAIA-BURGESS | |
MICROSWITCH, V4, PLUNGER; Microswitch Type:Snap Action; Microswitch Actuator:Plunger; Contact Config | ROHS COMPLIANT | 3,107 | 1+ : $13.56 5+ : $12.21 10+ : $10.86 20+ : $10.46 50+ : $10.05 |
Kaufe jetzt
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Artikelnummer | Mfg | Datenblatt | Beschreibung | Q'ty | Datencode | Standort | Reg -Datum | RFQ |
| V4PAL45HM3 | VISHAY/ |
|
D0-221BC | 120000 | 2020+ | Instock | 26-10-30 |
Anfrage
|
| V4PAN50-M3 | VISHAY/ |
|
D0-221BC | 120000 | 2020+ | Instock | 26-10-30 |
Anfrage
|
| V4PAL45HM3/I | VishaySemi |
|
DO-221BCSMPA | 357 | 20+PB | Pb-Free | 26-10-30 |
Anfrage
|
Basic
| Anbieter | Artikelnummer | Mfg | Datenblatt | Beschreibung | Q'ty | Datencode | Standort | Reg -Datum | RFQ |
| Lvangchip(HongKong).,Limited | V4P22C-M3/H | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Anfrage
|
| Lvangchip(HongKong).,Limited | V4P22C-M3/I | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Anfrage
|
| Lvangchip(HongKong).,Limited | V4P22CHM3/H | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Anfrage
|
| Lvangchip(HongKong).,Limited | V4P22CHM3/I | VishayGene |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Anfrage
|
1
V4P22CM3H Datenblatt
| Mfg | Artikelnummer | Datenblatt | Beschreibung |
 Vishay Siliconix |
V4P22C |
104Kb/5P |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 1 A Revision: 24-Jul-2019 |
| V4P22C-M3/H |
104Kb/5P |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 1 A Revision: 24-Jul-2019 |
|
| V4P22C-M3/I |
104Kb/5P |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 1 A Revision: 24-Jul-2019 |
|
| V4P22CHM3/H |
104Kb/5P |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 1 A Revision: 24-Jul-2019 |
|
| V4P22CHM3/I |
104Kb/5P |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 1 A Revision: 24-Jul-2019 |