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PHD20161B2R2MS Suchergebnisse
Premium Anbieter
Premium A
Element14
| Artikelnummer | Mfg | Datenblatt | Beschreibung | Rohs | Q'ty | Preis | Kaufe jetzt |
PHDMI2AB4Z
|
NEXPERIA |  |
ESD PROTRECTION DIODE, DFN2510A; Clamping Voltage Vc Max:5V; Diode Case Style:DFN2510A; No. of Pins: | ROHS COMPLIANT | 6,296 | 1+ : $1.35 10+ : $0.605 100+ : $0.532 500+ : $0.405 1000+ : $0.347 5000+ : $0.289 |
Kaufe jetzt
|
|
PHDMI2AB4Z
|
NEXPERIA | |
ESD PROTRECTION DIODE, DFN2510A; Clamping Voltage Vc Max:5V; Diode Case Style:DFN2510A; No. of Pins: | ROHS COMPLIANT | 6,296 | 100+ : $0.532 500+ : $0.405 1000+ : $0.347 5000+ : $0.289 |
Kaufe jetzt
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Artikelnummer | Mfg | Datenblatt | Beschreibung | Q'ty | Datencode | Standort | Reg -Datum | RFQ |
PHD20N06T
|
NXP |
|
SC-73 | 63000 | 20+PB | Pb-Free | 26-11-11 |
Anfrage
|
| PHD20N06LT | PHILIPS |
|
TO-252 | 35000 | 2016 | Instock | 26-11-11 |
Anfrage
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Artikelnummer | Mfg | Datenblatt | Beschreibung | Q'ty | Datencode | Standort | Reg -Datum | RFQ |
| PHD20161B-2R2MS |
|
SMD | 3500 | 2020+ | Instock | 26-11-11 |
Anfrage
|
|
|
PSD20161B2R2MS/PHD20161B-2R2MS
|
MURATA/ |
|
SMD | 70000 | 2020+ | Instock | 26-11-11 |
Anfrage
|
Basic
| Anbieter | Artikelnummer | Mfg | Datenblatt | Beschreibung | Q'ty | Datencode | Standort | Reg -Datum | RFQ |
| MicrotranikComponents,Inc | PHD20161B2R2MS | Distributor |
|
for more pls inquire us now | 151230 | 17+RoHS | New instock, best quality | 2026-09-29 |
Anfrage
|
| Transcrui Microcircuit Corporation | PHD20161B2R2MS | TI |
|
Original Parts&RoHS | 60650 | 2019+ | NEWSTOCK,HOT SALE!!! | 2024-09-23 |
Anfrage
|
| Evatronix(HK) Electronics Trade Inc | PHD20161B2R2MS | NS |
|
Original Parts, Quality excellent | 86790 | 18+RoHS | Instock，Rush delivery | 2024-09-24 |
Anfrage
|
1
PHD20161B2R2MS Datenblatt
| Mfg | Artikelnummer | Datenblatt | Beschreibung |
 NXP Semiconductors |
PHD20N06T |
307Kb/13P |
N-channel TrenchMOS transistor Rev. 01-22 February 2001 |
| PHD20N06T |
379Kb/12P |
N-channel TrenchMOS standard level FET Rev. 02-1 December 2009 |
|
 VBsemi Electronics ... |
PHD20N06T |
896Kb/6P |
N-Channel 60-V (D-S) MOSFET |
 Nexperia B.V. All r... |
PHD20N06T |
860Kb/12P |
N-channel TrenchMOS standard level FET Rev. 02 - 1 December 2009 |
 Inchange Semiconduc... |
PHD20N06T |
299Kb/2P |
isc N-Channel MOSFET Transistor |
|
VBsemi Electronics ... |
PHD20N06T118 |
896Kb/6P |
N-Channel 60-V (D-S) MOSFET |